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    3DIC seal ring structure and methods of forming same
    1.
    发明授权
    3DIC seal ring structure and methods of forming same 有权

    公开(公告)号：US11532661B2

    公开(公告)日：2022-12-20

    申请号：US16715636

    申请日：2019-12-16

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Cheng-Ying Ho ,  Pao-Tung Chen ,  Wen-De Wang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

    IPC分类号： H01L23/58 ,  H01L27/146

    摘要： A semiconductor device includes a first semiconductor chip including a first substrate, a plurality of first dielectric layers and a plurality of conductive lines formed in the first dielectric layers over the first substrate. The semiconductor device further includes a second semiconductor chip having a surface bonded to a first surface of the first semiconductor chip, the second semiconductor chip including a second substrate, a plurality of second dielectric layers and a plurality of second conductive lines formed in the second dielectric layers over the second substrate. The semiconductor device further includes a first conductive feature extending from the first semiconductor chip to one of the plurality of second conductive lines, and a first seal ring structure extending from the first semiconductor chip to the second semiconductor chip.

    SEAL RING STRUCTURES AND METHODS OF FORMING SAME
    3.
    发明申请
    SEAL RING STRUCTURES AND METHODS OF FORMING SAME 有权

    公开(公告)号：US20220278090A1

    公开(公告)日：2022-09-01

    申请号：US17748511

    申请日：2022-05-19

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Kuo-Ming Wu ,  Kuan-Liang Liu ,  Wen-De Wang ,  Yung-Lung Lin

    IPC分类号： H01L25/00 ,  H01L23/58 ,  H01L23/00

    摘要： Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

    Backside structure and methods for BSI image sensors
    6.
    发明授权
    Backside structure and methods for BSI image sensors 有权
    BSI图像传感器的背面结构和方法

    公开(公告)号：US09576999B2

    公开(公告)日：2017-02-21

    申请号：US15090275

    申请日：2016-04-04

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/18

    CPC分类号： H01L27/14685 ,  G02B1/11 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

    摘要翻译： BSI图像传感器和方法。 在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上选择性地去除所述金属屏蔽件 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

    Pad structures formed in double openings in dielectric layers
    8.
    发明授权
    Pad structures formed in double openings in dielectric layers 有权
    电介质层中双层开口形成的垫结构

    公开(公告)号：US09184207B2

    公开(公告)日：2015-11-10

    申请号：US14665901

    申请日：2015-03-23

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Shuang-Ji Tsai ,  Yueh-Chiou Lin

    IPC分类号： H01L21/768 ,  H01L27/146

    CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

    摘要： An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening.

    摘要翻译： 图像传感器装置包括具有正面和背面的半导体衬底。 第一电介质层位于半导体衬底的正面。 金属焊盘位于第一电介质层中。 第二电介质层在第一电介质层的上方和半导体衬底的正面上。 开口从半导体衬底的背面穿过半导体衬底，其中开口包括延伸以暴露金属焊盘的一部分的第一部分和延伸以暴露第二电介质层的一部分的第二部分。 金属层形成在开口的第一部分和第二部分中。

    Backside Structure and Method for BSI Image Sensors
    10.
    发明申请
    Backside Structure and Method for BSI Image Sensors 审中-公开
    BSI图像传感器的背面结构和方法

    公开(公告)号：US20150140722A1

    公开(公告)日：2015-05-21

    申请号：US14609066

    申请日：2015-01-29

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14685 ,  G02B1/11 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

    摘要翻译： BSI图像传感器和方法。 在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上选择性地去除所述金属屏蔽件 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。