- 专利标题: Display device and method for manufacturing the same
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申请号: US13360838申请日: 2012-01-30
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公开(公告)号: US08970106B2公开(公告)日: 2015-03-03
- 发明人: Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
- 申请人: Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2003-329201 20030919
- 主分类号: H01J1/62
- IPC分类号: H01J1/62 ; H01J63/04 ; H01L51/52 ; H01L27/32
摘要:
According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.
公开/授权文献
- US20120129287A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 公开/授权日:2012-05-24