Invention Grant
- Patent Title: Low power phase change memory cell
- Patent Title (中): 低功率相变存储单元
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Application No.: US13534267Application Date: 2012-06-27
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Publication No.: US08971089B2Publication Date: 2015-03-03
- Inventor: Elijah V. Karpov , Kuo-Wei Chang , Gianpaolo Spadini
- Applicant: Elijah V. Karpov , Kuo-Wei Chang , Gianpaolo Spadini
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; H01L27/24
Abstract:
A memory may include two electrodes and phase change material having an amorphous reset state and a partially crystalized set state, coupled between the two electrodes. The phase change material in the set state may have a highly nonlinear current-voltage response in a subthreshold voltage region. The phase change material may be an alloy of indium, antimony, and tellurium.
Public/Granted literature
- US20140003123A1 LOW POWER PHASE CHANGE MEMORY CELL Public/Granted day:2014-01-02
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