Invention Grant
- Patent Title: Plasma deposition apparatus and method
- Patent Title (中): 等离子体沉积装置及方法
-
Application No.: US11953348Application Date: 2007-12-10
-
Publication No.: US08973526B2Publication Date: 2015-03-10
- Inventor: Wook Seong Lee , Young Joon BaiK , Jong-Keuk Park , Gyu Weon Hwang , Jeung-hyun Jeong
- Applicant: Wook Seong Lee , Young Joon BaiK , Jong-Keuk Park , Gyu Weon Hwang , Jeung-hyun Jeong
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: Ladas & Parry LLP
- Priority: KR10-2007-0116932 20071115
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C16/00 ; H01J37/34

Abstract:
A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.
Public/Granted literature
- US20090127102A1 PLASMA DEPOSITION APPARATUS AND METHOD Public/Granted day:2009-05-21
Information query
IPC分类: