Plasma deposition apparatus and method
    1.
    发明授权
    Plasma deposition apparatus and method 有权
    等离子体沉积装置及方法

    公开(公告)号:US08973526B2

    公开(公告)日:2015-03-10

    申请号:US11953348

    申请日:2007-12-10

    IPC分类号: C23C14/34 C23C16/00 H01J37/34

    CPC分类号: H01J37/3497 H01J37/3435

    摘要: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

    摘要翻译: 等离子体沉积装置包括阴极组件,其包括阴极盘和支撑阴极盘的水冷阴极保持器,阳极组件,其包括水冷阳极保持器,安装在阳极保持器上用作阳极的衬底和 安装和支撑基板的基板支架,以及用于在真空状态下在阴极组件和阳极组件的相对表面之间施加电位差以形成原始气体的等离子体的反应器。 阴极盘使用自重和真空吸收力中的至少一种与阴极保持器热接触,以允许阴极盘的热膨胀。

    Se OR S BASED THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    Se OR S BASED THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    Se或S基薄膜太阳能电池及其制造方法

    公开(公告)号:US20130104972A1

    公开(公告)日:2013-05-02

    申请号:US13563915

    申请日:2012-08-01

    IPC分类号: H01L31/0224 H01L31/18

    摘要: Provided is a Se- or S-based thin film solar cell, including a substrate, a rear electrode formed on the substrate, a light absorbing layer formed on the rear electrode and containing at least one of selenium (Se) and sulfur (S), and an rear electrode top layer. The rear electrode top layer is formed between the rear electrode and the light absorbing layer, and contains a large amount of oxygen (O) to control diffusion of sodium (Na) through the rear electrode to the light absorbing layer. In this manner, it is possible to improve the electrical conductivity and interfacial adhesion of the rear electrode while stimulating diffusion of sodium (Na) to improve the efficiency of a thin film solar cell.

    摘要翻译: 提供了一种基于S或S的薄膜太阳能电池,其包括基板,形成在基板上的后电极,形成在后电极上并含有硒(Se)和硫(S)中的至少一种的光吸收层, ,和后电极顶层。 后电极顶层形成在后电极和光吸收层之间,并且含有大量的氧(O),以控制通过后电极将钠(Na)扩散到光吸收层。 以这种方式,可以改善后电极的导电性和界面粘合性,同时刺激钠(Na)的扩散以提高薄膜太阳能电池的效率。

    METHOD FOR GROWING THIN FILM
    4.
    发明申请
    METHOD FOR GROWING THIN FILM 有权
    生长薄膜的方法

    公开(公告)号:US20090324824A1

    公开(公告)日:2009-12-31

    申请号:US12417231

    申请日:2009-04-02

    IPC分类号: C23C16/00 B05D1/36

    摘要: Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.

    摘要翻译: 公开了一种用于生长薄膜的方法,其包括改变薄膜上的表面粒径和表面粗糙度以提高载体的迁移率和光散射效应。 生长薄膜的方法包括:在基板上形成具有各种晶粒取向的晶粒的核; 使得具有第一特定晶粒取向的第一晶粒主要在具有各种晶粒取向的晶粒中生长,由此形成由主要生长的第一晶粒组成的第一优选纹理; 然后使具有第二晶粒取向的第二晶粒主要生长,从而形成由主要生长的第二晶粒组成的第二优选纹理,其中形成第二纹理的每个第二晶粒的表面粒径大于 第一颗粒形成第一纹理。

    PLASMA DEPOSITION APPARATUS AND METHOD
    5.
    发明申请
    PLASMA DEPOSITION APPARATUS AND METHOD 有权
    等离子体沉积装置和方法

    公开(公告)号:US20090127102A1

    公开(公告)日:2009-05-21

    申请号:US11953348

    申请日:2007-12-10

    IPC分类号: C23C14/32

    CPC分类号: H01J37/3497 H01J37/3435

    摘要: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

    摘要翻译: 等离子体沉积装置包括阴极组件,其包括阴极盘和支撑阴极盘的水冷阴极保持器,阳极组件,其包括水冷阳极保持器,安装在阳极保持器上用作阳极的衬底和 安装和支撑基板的基板支架,以及用于在真空状态下在阴极组件和阳极组件的相对表面之间施加电位差以形成原始气体的等离子体的反应器。 阴极盘使用自重和真空吸收力中的至少一种与阴极保持器热接触,以允许阴极盘的热膨胀。

    Method for growing thin film
    6.
    发明授权
    Method for growing thin film 有权
    生长薄膜的方法

    公开(公告)号:US08247031B2

    公开(公告)日:2012-08-21

    申请号:US12417231

    申请日:2009-04-02

    IPC分类号: C23C16/00 B05D1/36

    摘要: Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.

    摘要翻译: 公开了一种用于生长薄膜的方法,其包括改变薄膜上的表面粒径和表面粗糙度以提高载体的迁移率和光散射效应。 生长薄膜的方法包括:在基板上形成具有各种晶粒取向的晶粒的核; 使得具有第一特定晶粒取向的第一晶粒主要在具有各种晶粒取向的晶粒中生长,由此形成由主要生长的第一晶粒组成的第一优选纹理; 然后使具有第二晶粒取向的第二晶粒主要生长,从而形成由主要生长的第二晶粒组成的第二优选纹理,其中形成第二纹理的每个第二晶粒的表面粒径大于 第一颗粒形成第一纹理。

    METHOD FOR DEPOSITING CUBIC BORON NITRIDE THIN FILM
    9.
    发明申请
    METHOD FOR DEPOSITING CUBIC BORON NITRIDE THIN FILM 审中-公开
    沉积CIBIC BORON NITRIDE THIN FILM的方法

    公开(公告)号:US20110223332A1

    公开(公告)日:2011-09-15

    申请号:US13047405

    申请日:2011-03-14

    IPC分类号: C23C16/00 C23C14/35

    CPC分类号: C23C14/0647 C23C14/067

    摘要: The present invention relates to a method for depositing a cBN thin film on a substrate to obtain an abrasive material by physical vapor deposition carried out under an atmosphere composed of an inert gas and hydrogen. The abrasive produced by the inventive method comprises the cBN thin film attached firmly to the substrate, which has excellent hardness and durability.

    摘要翻译: 本发明涉及一种在基板上沉积cBN薄膜的方法,通过在由惰性气体和氢气组成的气氛下进行物理气相沉积来获得研磨材料。 通过本发明方法制造的磨料包括牢固地附着到基底上的cBN薄膜,其具有优异的硬度和耐久性。