Invention Grant
US08975182B2 Method for manufacturing semiconductor device, and semiconductor device
有权
半导体装置的制造方法以及半导体装置
- Patent Title: Method for manufacturing semiconductor device, and semiconductor device
- Patent Title (中): 半导体装置的制造方法以及半导体装置
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Application No.: US14234476Application Date: 2012-07-27
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Publication No.: US08975182B2Publication Date: 2015-03-10
- Inventor: Satoshi Tanimoto , Yusuke Zushi , Yoshinori Murakami , Takashi Iseki , Masato Takamori , Shinji Sato , Kohei Matsui
- Applicant: Satoshi Tanimoto , Yusuke Zushi , Yoshinori Murakami , Takashi Iseki , Masato Takamori , Shinji Sato , Kohei Matsui
- Applicant Address: JP Yokohama JP Tokyo JP Niiza JP Kawasaki
- Assignee: Nissan Motor Co., Ltd.,Sumitomo Metal Mining Co., Ltd.,Sanken Electric Co., Ltd.,Fuji Electric Co., Ltd.
- Current Assignee: Nissan Motor Co., Ltd.,Sumitomo Metal Mining Co., Ltd.,Sanken Electric Co., Ltd.,Fuji Electric Co., Ltd.
- Current Assignee Address: JP Yokohama JP Tokyo JP Niiza JP Kawasaki
- Agency: Global IP Counselors, LLP
- Priority: JP2011-165508 20110728
- International Application: PCT/JP2012/069096 WO 20120727
- International Announcement: WO2013/015402 WO 20130131
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; B23K35/28 ; B23K35/00 ; B23K35/02 ; C22C18/04 ; B23K1/00 ; B23K1/008 ; B23K1/19 ; H01L29/16 ; H01L29/20
Abstract:
A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load to the ZnAl solder chip such that the ZnAl solder chip melts to form a ZnAl solder layer; and reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
Public/Granted literature
- US20140191250A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Public/Granted day:2014-07-10
Information query
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