Invention Grant
- Patent Title: Device including two power semiconductor chips and manufacturing thereof
- Patent Title (中): 装置包括两个功率半导体芯片及其制造
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Application No.: US13314438Application Date: 2011-12-08
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Publication No.: US08975711B2Publication Date: 2015-03-10
- Inventor: Ralf Otremba , Josef Hoeglauer , Joachim Mahler , Johannes Lodermeyer
- Applicant: Ralf Otremba , Josef Hoeglauer , Joachim Mahler , Johannes Lodermeyer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L23/00 ; H01L23/492 ; H01L21/48 ; H01L23/538 ; H01L21/56 ; H01L25/07 ; H01L25/00 ; H01L23/31

Abstract:
A device includes a first power semiconductor chip with a first contact pad and a second contact pad on a first face and a third contact pad on the second face. The device further includes a second power semiconductor chip with a first contact pad and a second contact pad on a first face and a third contact pad on the second face. The first and second power semiconductor chips are arranged one above another, and the first face of the first power semiconductor chip faces in the direction of the first face of the second power semiconductor chip. In addition, the first power semiconductor chip is located laterally at least partially outside of the outline of the second power semiconductor chip.
Public/Granted literature
- US20130146991A1 Device Including Two Power Semiconductor Chips and Manufacturing Thereof Public/Granted day:2013-06-13
Information query
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