发明授权
- 专利标题： Device including two power semiconductor chips and manufacturing thereof
- 专利标题（中）： 装置包括两个功率半导体芯片及其制造
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申请号： US13314438申请日： 2011-12-08
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公开(公告)号： US08975711B2公开(公告)日： 2015-03-10
- 发明人: Ralf Otremba , Josef Hoeglauer , Joachim Mahler , Johannes Lodermeyer
- 申请人： Ralf Otremba , Josef Hoeglauer , Joachim Mahler , Johannes Lodermeyer
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L23/00 ; H01L23/492 ; H01L21/48 ; H01L23/538 ; H01L21/56 ; H01L25/07 ; H01L25/00 ; H01L23/31
摘要：
A device includes a first power semiconductor chip with a first contact pad and a second contact pad on a first face and a third contact pad on the second face. The device further includes a second power semiconductor chip with a first contact pad and a second contact pad on a first face and a third contact pad on the second face. The first and second power semiconductor chips are arranged one above another, and the first face of the first power semiconductor chip faces in the direction of the first face of the second power semiconductor chip. In addition, the first power semiconductor chip is located laterally at least partially outside of the outline of the second power semiconductor chip.
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