发明授权
- 专利标题: Vias in porous substrates
- 专利标题(中): 多孔基材中的通孔
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申请号: US13092495申请日: 2011-04-22
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公开(公告)号: US08975751B2公开(公告)日: 2015-03-10
- 发明人: Ilyas Mohammed , Belgacem Haba , Cyprian Uzoh , Piyush Savalia
- 申请人: Ilyas Mohammed , Belgacem Haba , Cyprian Uzoh , Piyush Savalia
- 申请人地址: US CA San Jose
- 专利权人: Tessera, Inc.
- 当前专利权人: Tessera, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Lerner, David, Littenberg & Krumholz & Mentlik, LLP
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L21/768 ; H01L21/48 ; H01L23/14 ; H01L23/15 ; H01L23/48 ; H01L23/498
摘要:
A microelectronic unit can include a substrate having front and rear surfaces and active semiconductor devices therein, the substrate having a plurality of openings arranged in a symmetric or asymmetric distribution across an area of the rear surface, first and second conductive vias connected to first and second pads exposed at the front surface, pluralities of first and second conductive interconnects extending within respective ones of the openings, and first and second conductive contacts exposed for interconnection with an external element. The plurality of first conductive interconnects can be separated from the plurality of second conductive interconnects by at least one of the plurality of openings, the at least one opening at least partially filled with an insulating material. The distribution of the openings can include at least m openings spaced apart in a first direction and n openings spaced apart in a second direction transverse to the first direction.
公开/授权文献
- US20120267789A1 VIAS IN POROUS SUBSTRATES 公开/授权日:2012-10-25