发明授权
- 专利标题： Thin film forming apparatus and thin film forming method
- 专利标题（中）： 薄膜形成装置和薄膜形成方法
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申请号： US12305662申请日： 2007-06-25
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公开(公告)号： US08980007B2公开(公告)日： 2015-03-17
- 发明人: Chikao Mamiya , Ichiro Kudo , Masanobu Suzuki , Kiyoshi Oishi , Daishi Yamashita
- 申请人： Chikao Mamiya , Ichiro Kudo , Masanobu Suzuki , Kiyoshi Oishi , Daishi Yamashita
- 申请人地址： JP Tokyo
- 专利权人： Konica Minolta Holdings, Inc.
- 当前专利权人： Konica Minolta Holdings, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Lucas & Mercanti, LLP
- 优先权： JP2006-177813 20060628
- 国际申请： PCT/JP2007/062701 WO 20070625
- 国际公布： WO2008/001723 WO 20080103
- 主分类号： C23C16/54
- IPC分类号： C23C16/54 ; C23C16/509 ; C23C16/44 ; C23C16/455 ; C23C16/50 ; H05H1/24
摘要：
Disclosed is a thin film forming apparatus which is a plasma discharge processing apparatus for performing a plasma discharge processing on the surface of a continuously transported base at or near atmospheric pressure, wherein a reverse flow of the processing gas is prevented and thus a thin film having good quality is formed by a uniform gas flow. The thin film forming apparatus is characterized by having an auxiliary gas discharge means for discharging an auxiliary gas for preventing a reverse flow of the processing gas. Also disclosed are a thin film forming method, and a thin film.
公开/授权文献
- US20100159156A1 THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD 公开/授权日：2010-06-24
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