Invention Grant
- Patent Title: Combinatorial plasma enhanced deposition techniques
- Patent Title (中): 组合等离子体增强沉积技术
-
Application No.: US13656483Application Date: 2012-10-19
-
Publication No.: US08980765B2Publication Date: 2015-03-17
- Inventor: Sunil Shanker , Tony P. Chiang
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01J37/32 ; C23C16/04 ; C23C16/455 ; C23C16/509
Abstract:
Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.
Public/Granted literature
- US20130042811A1 Combinatorial Plasma Enhanced Deposition Techniques Public/Granted day:2013-02-21
Information query
IPC分类:
