公开(公告)号：US09397292B2

公开(公告)日：2016-07-19

申请号：US14505128

申请日：2014-10-02

申请人： Intermolecular Inc.

发明人： Pragati Kumar ,  Sean Barstow ,  Tony P. Chiang ,  Sunil Shanker

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/1633 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.

摘要翻译： 提供电阻式开关非易失性存储元件。 可以使用快速热退火技术来加热含金属层和用于存储元件的氧化物层。 在加热期间，氧化物层可能分解并与含金属层反应。 来自分解氧化物层的氧可以从含金属的层与金属形成金属氧化物。 所得到的金属氧化物可以表现出用于电阻式开关存储元件的电阻式开关。

公开(公告)号：US09245744B2

公开(公告)日：2016-01-26

申请号：US14253712

申请日：2014-04-15

申请人： Intermolecular, Inc.

发明人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： C23C16/50 ,  C23C16/509 ,  H01L21/02 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/02 ,  C23C16/458 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/02274 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/3065 ,  H01L21/67069

摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

摘要翻译： 根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源 淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于 所述至少两个电极。

公开(公告)号：US20140051210A1

公开(公告)日：2014-02-20

申请号：US14062473

申请日：2013-10-24

申请人： Intermolecular Inc.

发明人： Sandra G Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Pragati KUMAR ,  Prashant B Phatak ,  Sunil Shanker ,  Wen Wu

IPC分类号： H01L45/00

CPC分类号： H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

公开(公告)号：US08901708B2

公开(公告)日：2014-12-02

申请号：US13675971

申请日：2012-11-13

申请人： Intermolecular, Inc.

发明人： Imran Hashim ,  Hanhong Chen ,  Tony Chiang ,  Indranil De ,  Nobumichi Fuchigami ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Sunil Shanker

IPC分类号： H01L21/02 ,  H01L49/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L27/108

CPC分类号： H01L28/65 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02697 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/10852 ,  H01L28/40

摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.

公开(公告)号：US20140256111A1

公开(公告)日：2014-09-11

申请号：US14281550

申请日：2014-05-19

申请人： Intermolecular Inc.

发明人： Sandra G. Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Wayne R. French ,  Pragati Kumar ,  Prashant B. Phatak ,  Sunil Shanker ,  Wen Wu

IPC分类号： H01L45/00

CPC分类号： H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

摘要翻译： 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

公开(公告)号：US20140227880A1

公开(公告)日：2014-08-14

申请号：US14253712

申请日：2014-04-15

申请人： Intermolecular, Inc.

发明人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

IPC分类号： H01L21/02 ,  H01L21/3065

CPC分类号： H01L21/02274 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/3065 ,  H01L21/67069

摘要： According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

摘要翻译： 根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源 淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于 所述至少两个电极。

公开(公告)号：US20140166616A1

公开(公告)日：2014-06-19

申请号：US13717478

申请日：2012-12-17

申请人： INTERMOLECULAR, INC.

发明人： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang ,  Sandip Niyogi

IPC分类号： C23C16/50 ,  B44C1/22

CPC分类号： C23C16/50 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4584

摘要： Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber, a remote plasma source, and a showerhead. Inert gas ports within the showerhead assembly can be used to alter the concentration and energy of reactive radical or reactive neutral species generated by the remote plasma source in different regions of the showerhead. This allows the showerhead to be used to apply a surface treatment to different regions of the surface of a substrate. Varying parameters such as the remote plasma parameters, the inert gas flows, pressure, and the like allow different regions of the substrate to be treated in a combinatorial manner.

摘要翻译： 公开了使用远程等离子体源的处理方法和装置。 该装置包括外室，远程等离子体源和喷头。 喷头组件内的惰性气体端口可用于改变由喷头的不同区域中的远程等离子体源产生的反应性基团或反应中性物质的浓度和能量。 这允许使用喷头来对表面的不同区域进行表面处理。 诸如远程等离子体参数，惰性气体流量，压力等的不同参数允许以组合的方式处理衬底的不同区域。

公开(公告)号：US08592282B2

公开(公告)日：2013-11-26

申请号：US13656585

申请日：2012-10-19

申请人： Intermolecular, Inc.

发明人： Sandra G. Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Pragati Kumar ,  Prashant B. Phatak ,  Sunil Shanker ,  Wen Wu

IPC分类号： H01L21/02

CPC分类号： H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

公开(公告)号：US20130071990A1

公开(公告)日：2013-03-21

申请号：US13677126

申请日：2012-11-14

申请人： Intermolecular, Inc.

发明人： Imran Hashim ,  Hanhong Chen ,  Tony Chiang ,  Indranil De ,  Nobi Fuchigami ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Sunil Shanker

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02697 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/10852 ,  H01L28/40

摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.

摘要翻译： 本公开内容提供（a）制造基于钇和钛的氧化物层（例如，电介质层）的方法，以具有高介电常数和低泄漏特性，以及（b）相关的器件和结构。 具有钇和钛的氧化物层可以制成无定形氧化物或交替的单层系列。 在几个实施方案中，氧化物的特征在于对特定控制的总金属的钇贡献。 如果需要，可以通过PVD工艺或者通过使用特定的前体材料以允许钛和钇的共同工艺温度窗口的原子层沉积工艺作为反应过程的结果来生产氧化物层 反应。

公开(公告)号：US20130069201A1

公开(公告)日：2013-03-21

申请号：US13675971

申请日：2012-11-13

申请人： Intermolecular, Inc.

发明人： Imran Hashim ,  Hanhong Chen ,  Tony Chiang ,  Indranil De ,  Nobumichi Fuchigami ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Sunil Shanker

IPC分类号： H01L49/02

CPC分类号： H01L28/65 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02697 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/10852 ,  H01L28/40

摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.