Invention Grant
US08981334B1 Memory cells having regions containing one or both of carbon and boron
有权
存储单元具有包含碳和硼中的一个或两个的区域
- Patent Title: Memory cells having regions containing one or both of carbon and boron
- Patent Title (中): 存储单元具有包含碳和硼中的一个或两个的区域
-
Application No.: US14070407Application Date: 2013-11-01
-
Publication No.: US08981334B1Publication Date: 2015-03-17
- Inventor: Martin Schubert , Shu Qin , Scott E. Sills , D.V. Nirmal Ramaswamy , Allen McTeer , Yongjun Jeff Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00
Abstract:
Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.
Information query
IPC分类:
