A semiconductor structure uses its control gate to be the wordline for receiving an operation voltage for the semiconductor structure. The semiconductor structure has a first and a second doped region and a buried channel between the first and the second doped region, wherein the buried channel has a first length along the first direction. The semiconductor structure further has a charge trapping layer stack on the buried channel and a conductive layer on the charge trapping layer stack, wherein the conductive layer extends along the first direction. The conductive layer is configured as both the control gate and the wordline of the semiconductor structure.