Invention Grant
- Patent Title: Lateral bipolar junction transistor and fabrication method thereof
- Patent Title (中): 侧面双极结型晶体管及其制造方法
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Application No.: US13974939Application Date: 2013-08-23
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Publication No.: US08981521B1Publication Date: 2015-03-17
- Inventor: Chang-Tzu Wang , Pei-Shan Tseng , Tien-Hao Tang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/735
- IPC: H01L29/735 ; H01L29/73 ; H01L29/66
Abstract:
Provided is a lateral BJT including a substrate, a well region, an area, at least one lightly doped region, a first doped region, and a second doped region. The substrate is of a first conductivity type. The well region is of a second conductivity type and is in the substrate. The area is in the well region. The at least one lightly doped region is in the well region below the area. The first doped region and the second doped region are of the first conductivity type and are in the well region on both sides of the area. The first doped region is connected to a cathode. The second doped region is connected to an anode, wherein the doping concentration of the at least one lightly doped region is lower than that of each of the first doped region, the second doped region, and the well region.
Public/Granted literature
- US20150054132A1 LATERAL BIPOLAR JUNCTION TRANSISTOR AND FABRICATION METHOD THEREOF Public/Granted day:2015-02-26
Information query
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