Invention Grant
- Patent Title: Semiconductor device comprising a crack stop structure
- Patent Title (中): 半导体器件包括裂纹停止结构
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Application No.: US14032618Application Date: 2013-09-20
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Publication No.: US08981551B2Publication Date: 2015-03-17
- Inventor: Philippe Delpech , Eric Sabouret , Sebastien Gallois-Garreignot
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Allen, Dyer, Doppeli, Milbrath & Gilchrist, P.A.
- Priority: FR1259258 20121001
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/50
Abstract:
A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.
Public/Granted literature
- US20140091451A1 SEMICONDUCTOR DEVICE COMPRISING A CRACK STOP STRUCTURE Public/Granted day:2014-04-03
Information query
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