公开(公告)号：US08981551B2

公开(公告)日：2015-03-17

申请号：US14032618

申请日：2013-09-20

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Philippe Delpech ,  Eric Sabouret ,  Sebastien Gallois-Garreignot

IPC: H01L23/48 ,  H01L23/00 ,  H01L21/50

CPC classification number: H01L23/562 ,  H01L21/50 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/02235 ,  H01L2224/02381 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05548 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/131 ,  H01L2924/014

Abstract: A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.

Abstract translation: 半导体器件可以包括邻近器件的顶表面的至少一个焊盘以及位于该至少一个焊盘下方的金属裂纹停止结构。 金属裂纹结构可以具有内封套和外封套，并且可以被配置为与至少一个焊盘垂直对准，使得至少一个焊盘的边缘在内包封和外包封之间。

公开(公告)号：US20140091451A1

公开(公告)日：2014-04-03

申请号：US14032618

申请日：2013-09-20

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Philippe Delpech ,  Eric Sabouret ,  Sebastien Gallois-Garreignot

IPC: H01L23/00 ,  H01L21/50

CPC classification number: H01L23/562 ,  H01L21/50 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/02235 ,  H01L2224/02381 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05093 ,  H01L2224/05548 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/131 ,  H01L2924/014

Abstract: A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.

Abstract translation: 半导体器件可以包括邻近器件的顶表面的至少一个焊盘以及位于该至少一个焊盘下方的金属裂纹停止结构。 金属裂纹结构可以具有内封套和外封套，并且可以被配置为与至少一个焊盘垂直对准，使得至少一个焊盘的边缘在内包封和外包封之间。