发明授权
US08982329B2 Method and apparatus for measuring line end shortening, substrate and patterning device
有权
用于测量线端缩短的方法和装置,基板和图案形成装置
- 专利标题: Method and apparatus for measuring line end shortening, substrate and patterning device
- 专利标题(中): 用于测量线端缩短的方法和装置,基板和图案形成装置
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申请号: US12933806申请日: 2009-04-22
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公开(公告)号: US08982329B2公开(公告)日: 2015-03-17
- 发明人: Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Marcus Adrianus Van De Kerkhof
- 申请人: Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Marcus Adrianus Van De Kerkhof
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 国际申请: PCT/EP2009/002915 WO 20090422
- 国际公布: WO2009/130010 WO 20091029
- 主分类号: G03B27/32
- IPC分类号: G03B27/32 ; G01B11/14 ; G03F7/20 ; G01N21/956 ; G03F1/00 ; G03F1/44
摘要:
End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.
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