公开(公告)号：US08982329B2

公开(公告)日：2015-03-17

申请号：US12933806

申请日：2009-04-22

申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

IPC分类号： G03B27/32 ,  G01B11/14 ,  G03F7/20 ,  G01N21/956 ,  G03F1/00 ,  G03F1/44

CPC分类号： G03F7/70683 ,  G01N21/95607 ,  G03F1/0092 ,  G03F1/14 ,  G03F1/44 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/70641

摘要： End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

摘要翻译： 在使用光刻设备的部件的制造期间可能发生线路效应的结束。 这些线路效应的结束可能导致正在制造的功能的线端缩短。 这种线端缩短可能对正在制造的部件产生不利影响。 因此，希望预测和/或监视线端缩短。 提供了具有两个独立区域的测试图案，使得如设计的那样，当两个区域被辐射照射时（例如，从角度分辨的散射仪）照射，它们导致具有彼此相等的不对称性的漫射辐射， 但在数量上相反。 当实际制造测试图形时，发生线端缩短，因此两个区域的不对称性不相等。 根据制造的测试图案的测量不对称性，可以估计发生的线端缩短量。

公开(公告)号：US20110109888A1

公开(公告)日：2011-05-12

申请号：US12933806

申请日：2009-04-22

申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Marcus Adrianus Van De Kerkhof

IPC分类号： G03B27/42 ,  G01N21/47

CPC分类号： G03F7/70683 ,  G01N21/95607 ,  G03F1/0092 ,  G03F1/14 ,  G03F1/44 ,  G03F1/84 ,  G03F7/70625 ,  G03F7/70641

摘要： End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

摘要翻译： 在使用光刻设备的部件的制造期间可能发生线路效应的结束。 这些线路效应的结束可能导致正在制造的功能的线端缩短。 这种线端缩短可能对正在制造的部件产生不利影响。 因此，希望预测和/或监视线端缩短。 提供了具有两个独立区域的测试图案，使得如设计的那样，当两个区域被辐射照射时（例如，从角度分辨的散射仪）照射，它们导致具有彼此相等的不对称性的漫射辐射， 但在数量上相反。 当实际制造测试图形时，发生线端缩短，因此两个区域的不对称性不相等。 根据制造的测试图案的测量不对称性，可以估计发生的线端缩短量。

公开(公告)号：US09494872B2

公开(公告)日：2016-11-15

申请号：US13060390

申请日：2009-09-08

申请人： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar

发明人： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar

IPC分类号： G03F7/20

CPC分类号： G03F7/70633 ,  G03F7/70625

摘要： The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.

摘要翻译： 本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。 在本实施例中，作为基板上的聚焦光束的测量点大于目标。 关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。 这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。 在投影仪的瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，基底上的结构的临界尺寸或重叠相关。

公开(公告)号：US20110229830A1

公开(公告)日：2011-09-22

申请号：US13060390

申请日：2009-09-08

申请人： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar

发明人： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Marcus Adrianus Van De Kerkhof ,  Maurits Van Der Schaar

IPC分类号： G03F7/20 ,  G01N21/55 ,  G01B11/14 ,  G03B27/54

CPC分类号： G03F7/70633 ,  G03F7/70625

摘要： The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.

摘要翻译： 本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。 在本实施例中，作为基板上的聚焦光束的测量点大于目标。 关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。 这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。 在投影仪的瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，基底上的结构的临界尺寸或重叠相关。

公开(公告)号：US20100068830A1

公开(公告)日：2010-03-18

申请号：US12611428

申请日：2009-11-03

申请人： Richard Johannes Franciscus VAN HAREN ,  Arie Jeffrey Den Boef ,  Jacobus Burghoorn ,  Maurits Van Der Schaar ,  Bartolomeus Petrus Rijpers

发明人： Richard Johannes Franciscus VAN HAREN ,  Arie Jeffrey Den Boef ,  Jacobus Burghoorn ,  Maurits Van Der Schaar ,  Bartolomeus Petrus Rijpers

IPC分类号： H01L21/66 ,  G21K5/00 ,  H01L21/26

CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7065 ,  G03F9/7076 ,  G03F9/7092 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength.

摘要翻译： 本发明包括具有用于产生具有第一波长的辐射的第一源和具有用于产生具有第二波长的辐射的第二源的对准系统的光刻系统。 第二波长大于第一波长。 提供了具有第一层和第二层的标记结构。 第二层直接或间接地存在于所述第一层的顶部。 第一层具有第一周期性结构，第二层具有第二周期性结构。 至少一个周期性结构在尺寸小于400nm的至少一个方向上具有多个特征。 另外，第一和第二周期结构的组合形成被布置为被具有第二波长的辐射照射的衍射结构。

公开(公告)号：US07879682B2

公开(公告)日：2011-02-01

申请号：US12611428

申请日：2009-11-03

申请人： Richard Johannes Franciscus Van Haren ,  Arie Jeffrey Den Boef ,  Jacobus Burghoorn ,  Maurits Van Der Schaar ,  Bart Rijpers

发明人： Richard Johannes Franciscus Van Haren ,  Arie Jeffrey Den Boef ,  Jacobus Burghoorn ,  Maurits Van Der Schaar ,  Bart Rijpers

IPC分类号： H01L21/76 ,  H01L21/78 ,  H01L21/46 ,  H01L23/544 ,  G01B11/00

CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7065 ,  G03F9/7076 ,  G03F9/7092 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength.

摘要翻译： 本发明包括具有用于产生具有第一波长的辐射的第一源和具有用于产生具有第二波长的辐射的第二源的对准系统的光刻系统。 第二波长大于第一波长。 提供了具有第一层和第二层的标记结构。 第二层直接或间接地存在于所述第一层的顶部。 第一层具有第一周期性结构，第二层具有第二周期性结构。 至少一个周期性结构在尺寸小于400nm的至少一个方向上具有多个特征。 另外，第一和第二周期结构的组合形成被布置为被具有第二波长的辐射照射的衍射结构。

公开(公告)号：US07821650B2

公开(公告)日：2010-10-26

申请号：US12141640

申请日：2008-06-18

申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Everhardus Cornelis Mos

发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Everhardus Cornelis Mos

IPC分类号： G01B11/24

CPC分类号： G03F7/70433 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084

摘要： In a device manufacturing method and a metrology apparatus, metrology measurements are executed using radiation having a first wavelength. Subsequently a grid of conducting material is applied on the substrate, the grid having grid openings which in a first direction in the plane of the grid are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.

摘要翻译： 在装置制造方法和计量装置中，使用具有第一波长的辐射来执行度量测量。 随后，将导电材料栅格施加在基板上，栅格具有在栅格平面中的第一方向上的栅格开口小于第一波长。 测量目标的划线中的空间现在被屏蔽，并且可以再次用于基板的更多层或处理步骤。

公开(公告)号：US07629697B2

公开(公告)日：2009-12-08

申请号：US10986179

申请日：2004-11-12

申请人： Richard Johannes Franciscus Van Haren ,  Arie Jeffrey Den Boef ,  Jacobus Burghoorn ,  Maurits Van Der Schaar ,  Bartolomeus Petrus Rijpers

发明人： Richard Johannes Franciscus Van Haren ,  Arie Jeffrey Den Boef ,  Jacobus Burghoorn ,  Maurits Van Der Schaar ,  Bartolomeus Petrus Rijpers

IPC分类号： H01L23/544 ,  H01L21/76 ,  H01L21/78 ,  H01L21/46 ,  G01B11/00

CPC分类号： H01L23/544 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7065 ,  G03F9/7076 ,  G03F9/7092 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength.

摘要翻译： 本发明包括具有用于产生具有第一波长的辐射的第一源和具有用于产生具有第二波长的辐射的第二源的对准系统的光刻系统。 第二波长大于第一波长。 提供了具有第一层和第二层的标记结构。 第二层直接或间接地存在于所述第一层的顶部。 第一层具有第一周期性结构，第二层具有第二周期性结构。 至少一个周期性结构在尺寸小于400nm的至少一个方向上具有多个特征。 另外，第一和第二周期结构的组合形成被布置为被具有第二波长的辐射照射的衍射结构。

公开(公告)号：US07112813B2

公开(公告)日：2006-09-26

申请号：US10665720

申请日：2003-09-22

申请人： Arie Jeffrey Den Boef ,  Frank Bornebroek ,  Hugo Augustinus Joseph Cramer ,  Mircea Dusa ,  Richard Johannes Franciscus Van Haren ,  Antoine Gaston Marie Kiers ,  Justin Lloyd Kreuzer ,  Maurits Van Der Schaar ,  Paul Jacques Van Wijnen ,  Everhardus Cornelis Mos ,  Pieter Willem Herman De Jager ,  Hans Van Der Laan ,  Paul Frank Luehrmann

发明人： Arie Jeffrey Den Boef ,  Frank Bornebroek ,  Hugo Augustinus Joseph Cramer ,  Mircea Dusa ,  Richard Johannes Franciscus Van Haren ,  Antoine Gaston Marie Kiers ,  Justin Lloyd Kreuzer ,  Maurits Van Der Schaar ,  Paul Jacques Van Wijnen ,  Everhardus Cornelis Mos ,  Pieter Willem Herman De Jager ,  Hans Van Der Laan ,  Paul Frank Luehrmann

IPC分类号： G01N21/86

CPC分类号： G03F9/7084 ,  G03F9/7046 ,  G03F9/7049 ,  G03F9/7076 ,  G03F9/7088 ,  G03F9/7092

摘要： A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.

摘要翻译： 一种设备检查方法，所述方法包括在要检查的设备上提供不对称标记，标记的不对称形式取决于待检查的参数，将光引导到标记处，获得第一测量位置 通过检测特定波长或衍射角的衍射光，通过检测不同波长或衍射角的衍射光来获得标记的位置的第二测量，并且比较第一和第二测量位置以确定偏移 指示标记物的不对称程度。

公开(公告)号：US20090027691A1

公开(公告)日：2009-01-29

申请号：US12141640

申请日：2008-06-18

申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Everhardus Cornelis Mos

发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Everhardus Cornelis Mos

IPC分类号： G01B11/25 ,  G03B27/52

CPC分类号： G03F7/70433 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084

摘要： In a device manufacturing method and a metrology apparatus, metrology measurements are executed using radiation having a first wavelength. Subsequently a grid of conducting material is applied on the substrate, the grid having grid openings which in a first direction in the plane of the grid are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.

摘要翻译： 在装置制造方法和计量装置中，使用具有第一波长的辐射来执行度量测量。 随后，将导电材料栅格施加在基板上，栅格具有在栅格平面中的第一方向上的栅格开口小于第一波长。 测量目标的划线中的空间现在被屏蔽，并且可以再次用于基板的更多层或处理步骤。