Invention Grant
- Patent Title: Method for developing a custom device
- Patent Title (中): 开发定制设备的方法
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Application No.: US13683344Application Date: 2012-11-21
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Publication No.: US08987079B2Publication Date: 2015-03-24
- Inventor: Zvi Or-Bach
- Applicant: Monolithic 3D Inc.
- Applicant Address: US CA San Jose
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/4763 ; H01L21/822 ; H01L21/683 ; H01L21/762 ; H01L21/8238 ; H01L21/84 ; H01L23/525 ; H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L27/02 ; H01L27/06 ; H01L27/092 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/11 ; H01L27/112 ; H01L27/115 ; H01L27/118 ; H01L27/12 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L23/367 ; H01L23/48

Abstract:
A method for developing a custom device, the method including: programming a programmable device, where the programmable device includes a layer of monocrystalline first transistors and alignment marks, the first layer of monocrystalline first transistors is overlaid by interconnection layers, the interconnection layers are overlaid by a second layer of monocrystalline second transistors, where the interconnection layers include copper or aluminum, where the programming includes use of the second transistors, where the programming includes use of N type transistors and P type transistors, and where the programmable device includes at least one programmable connection; and then a step of producing a volume device according to a specific programmed design of the programmable device, where the volume device includes the at least one programmable connection replaced with a lithography defined connection, and where the volume device does not have the second layer.
Public/Granted literature
- US20130119557A1 SYSTEMS COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2013-05-16
Information query
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