Invention Grant
- Patent Title: Semiconductor process
- Patent Title (中): 半导体工艺
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Application No.: US13367376Application Date: 2012-02-07
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Publication No.: US08987096B2Publication Date: 2015-03-24
- Inventor: Ying-Tsung Chen , Chien-Ting Lin , Ssu-I Fu , Shih-Hung Tsai , Wen-Tai Chiang , Chih-Wei Chen , Chiu-Hsien Yeh , Shao-Wei Wang , Kai-Ping Wang
- Applicant: Ying-Tsung Chen , Chien-Ting Lin , Ssu-I Fu , Shih-Hung Tsai , Wen-Tai Chiang , Chih-Wei Chen , Chiu-Hsien Yeh , Shao-Wei Wang , Kai-Ping Wang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/28 ; H01L29/66 ; H01L29/78 ; H01L29/51
Abstract:
A semiconductor process includes the following steps. A substrate is provided. An ozone saturated deionized water process is performed to form an oxide layer on the substrate. A dielectric layer is formed on the oxide layer. A post dielectric annealing (PDA) process is performed on the dielectric layer and the oxide layer.
Public/Granted literature
- US20130203230A1 SEMICONDUCTOR PROCESS Public/Granted day:2013-08-08
Information query
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