发明授权
- 专利标题： Semiconductor process
- 专利标题（中）： 半导体工艺
-
申请号： US13367376申请日： 2012-02-07
-
公开(公告)号： US08987096B2公开(公告)日： 2015-03-24
- 发明人: Ying-Tsung Chen , Chien-Ting Lin , Ssu-I Fu , Shih-Hung Tsai , Wen-Tai Chiang , Chih-Wei Chen , Chiu-Hsien Yeh , Shao-Wei Wang , Kai-Ping Wang
- 申请人： Ying-Tsung Chen , Chien-Ting Lin , Ssu-I Fu , Shih-Hung Tsai , Wen-Tai Chiang , Chih-Wei Chen , Chiu-Hsien Yeh , Shao-Wei Wang , Kai-Ping Wang
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/28 ; H01L29/66 ; H01L29/78 ; H01L29/51
摘要：
A semiconductor process includes the following steps. A substrate is provided. An ozone saturated deionized water process is performed to form an oxide layer on the substrate. A dielectric layer is formed on the oxide layer. A post dielectric annealing (PDA) process is performed on the dielectric layer and the oxide layer.
公开/授权文献
- US20130203230A1 SEMICONDUCTOR PROCESS 公开/授权日：2013-08-08
信息查询
IPC分类:
