Invention Grant
US08987699B2 Conductive bridge resistive memory device and method of manufacturing the same 有权
导电桥电阻式存储器件及其制造方法

Conductive bridge resistive memory device and method of manufacturing the same
Abstract:
A conductive bridge resistive memory device is provided, comprising a first electrode, a memory layer electrically coupled to the first electrode, an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer, a semiconductor layer disposed between the memory layer and the ion-supplying layer, and a second electrode electrically coupled to the ion-supplying layer.
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