Invention Grant
- Patent Title: Conductive bridge resistive memory device and method of manufacturing the same
- Patent Title (中): 导电桥电阻式存储器件及其制造方法
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Application No.: US13871040Application Date: 2013-04-26
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Publication No.: US08987699B2Publication Date: 2015-03-24
- Inventor: Feng-Min Lee , Yu-Yu Lin , Wei-Chih Chien , Wei-Chen Chen , Ming-Hsiu Lee
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L45/00 ; H01L29/861 ; E04H17/16

Abstract:
A conductive bridge resistive memory device is provided, comprising a first electrode, a memory layer electrically coupled to the first electrode, an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer, a semiconductor layer disposed between the memory layer and the ion-supplying layer, and a second electrode electrically coupled to the ion-supplying layer.
Public/Granted literature
- US20140203235A1 CONDUCTIVE BRIDGE RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-07-24
Information query
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