Invention Grant
- Patent Title: Backside stimulated sensor with background current manipulation
- Patent Title (中): 带背景电流操作的背面刺激传感器
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Application No.: US14205203Application Date: 2014-03-11
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Publication No.: US08987841B2Publication Date: 2015-03-24
- Inventor: Manoj Bikumandla , Dominic Massetti
- Applicant: Omnivision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; G01N27/26 ; G01N27/414

Abstract:
A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.
Public/Granted literature
- US20140191294A1 BACKSIDE STIMULATED SENSOR WITH BACKGROUND CURRENT MANIPULATION Public/Granted day:2014-07-10
Information query
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