Invention Grant
US08987869B2 Integrated circuit devices including through-silicon-vias having integral contact pads
有权
集成电路器件包括具有整体接触焊盘的通孔通孔
- Patent Title: Integrated circuit devices including through-silicon-vias having integral contact pads
- Patent Title (中): 集成电路器件包括具有整体接触焊盘的通孔通孔
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Application No.: US13738728Application Date: 2013-01-10
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Publication No.: US08987869B2Publication Date: 2015-03-24
- Inventor: Jeong-gi Jin , Jeong-woo Park , Ju-il Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2012-0003455 20120111
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L29/40 ; H01L29/82 ; H01L23/48 ; H01L23/00 ; H01L21/768 ; H01L23/31
Abstract:
An integrated circuit device including an interlayer insulating layer on a substrate, a wire layer on the interlayer insulating layer, and a through-silicon-via (TSV) contact pattern having an end contacting the wire layer and integrally extending from inside of a via hole formed through the interlayer insulating layer and the substrate to outside of the via hole.
Public/Granted literature
- US20130175673A1 INTEGRATED CIRCUIT DEVICES INCLUDING THROUGH-SILICON-VIAS HAVING INTEGRAL CONTACT PADS Public/Granted day:2013-07-11
Information query
IPC分类:
