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公开(公告)号：US08872306B2
公开(公告)日：2014-10-28
申请号：US13797655
申请日：2013-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggi Jin , Jeong-woo Park , Ju-il Choi
IPC: H01L23/525 , H01L23/48 , H01L23/00 , H01L23/31 , H01L25/065 , H01L23/29
CPC classification number: H01L23/5256 , H01L23/293 , H01L23/3178 , H01L23/481 , H01L24/05 , H01L24/13 , H01L25/0657 , H01L2224/02126 , H01L2224/0401 , H01L2224/05022 , H01L2224/05541 , H01L2224/05558 , H01L2224/05571 , H01L2224/05572 , H01L2224/10126 , H01L2224/13005 , H01L2224/13006 , H01L2224/13022 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2924/00014 , H01L2924/12042 , H01L2924/3511 , H01L2924/00012 , H01L2924/207 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552 , H01L2924/00
Abstract: Provided are electrical connection structures and methods of fabricating the same. The structures may include a substrate including a bonding pad region provided with a bonding pad and a fuse region provided with a fuse, an insulating layer provided on the substrate and including a bonding pad opening exposing the bonding pad and a fuse opening exposing the fuse region, a connection terminal provided in the bonding pad region and electrically connected to the bonding pad, and a protection layer provided on the insulating layer including a first protection layer provided within the bonding pad region and a second protection layer in the fuse opening.
Abstract translation: 提供电连接结构及其制造方法。 该结构可以包括：衬底，其包括具有接合焊盘的接合焊盘区域和设置有保险丝的熔断器区域，设置在衬底上的绝缘层，并且包括露出焊盘的焊盘开口和暴露熔丝区域的保险丝开口 设置在所述焊盘区域中并且电连接到所述焊盘的连接端子，以及设置在所述绝缘层上的保护层，所述保护层包括设置在所述焊盘区域内的第一保护层和所述熔丝开口中的第二保护层。
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Patent Agency Ranking
2.发明申请公开(公告)号：US20130313707A1
公开(公告)日：2013-11-28
申请号：US13826694
申请日：2013-03-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ju-il Choi , Jeong-woo Park , Jeonggi Jin , Yeun-Sang Park
IPC: H01L23/00
CPC classification number: H01L24/12 , H01L23/3128 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0347 , H01L2224/0401 , H01L2224/05557 , H01L2224/05567 , H01L2224/05572 , H01L2224/05573 , H01L2224/05624 , H01L2224/05647 , H01L2224/10145 , H01L2224/1146 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13017 , H01L2224/13076 , H01L2224/13082 , H01L2224/13084 , H01L2224/13111 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13183 , H01L2224/16058 , H01L2224/16145 , H01L2224/16146 , H01L2224/81193 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2224/11 , H01L2924/01024 , H01L2924/01074 , H01L2924/014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2224/05552
Abstract: Provided are electrical interconnections and methods for fabricating the same. The electrical interconnection may include a substrate including a bonding pad, a solder ball electrically connected to the bonding pad, a solder supporter on the bonding pad, a portion of the solder ball filling the solder supporter, and a metal layer between the bonding pad and the solder supporter, the metal layer having an ionization tendency lower than the bonding pad.
Abstract translation: 提供电互连及其制造方法。 电互连可以包括：衬底，其包括接合焊盘，与接合焊盘电连接的焊球，焊盘上的焊料支撑体，填充焊料支撑体的焊球的一部分，以及在焊盘和焊盘之间的金属层 所述焊料支撑体，所述金属层的电离倾向低于所述接合焊盘。
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公开(公告)号：US09123904B2
公开(公告)日：2015-09-01
申请号：US14146335
申请日：2014-01-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae-hwang Lee , Jeong-woo Park , Yoon-young Kwon , Kyung-wook Park , Mi-jeong Song , Young-Zo Yoo , Yong-wan Jin
CPC classification number: H01L51/442 , H01L51/5215 , Y02E10/549 , Y02P70/521
Abstract: In one example embodiment, a light emitting device includes a transparent substrate and a transparent electrode on the transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one of the at least two transparent electrode layers that is closer to the transparent substrate being higher than the refractive index of the other one of the at least two transparent electrode layers. The light emitting device further includes a light emission layer on the transparent electrode and a reflective electrode on the light emission layer.
Abstract translation: 在一个示例性实施例中，发光器件包括透明基板和透明电极，透明电极包括至少两个透明电极层，所述至少两个透明电极层依次层叠并具有不同的折射率， 所述至少两个透明电极层中的至少两个透明电极层之一的折射率比所述至少两个透明电极层中的另一个的折射率高。 发光装置还包括透明电极上的发光层和发光层上的反射电极。
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4.发明授权Integrated circuit devices including through-silicon-vias having integral contact pads 有权集成电路器件包括具有整体接触焊盘的通孔通孔公开(公告)号：US08987869B2
公开(公告)日：2015-03-24
申请号：US13738728
申请日：2013-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong-gi Jin , Jeong-woo Park , Ju-il Choi
CPC classification number: H01L23/481 , H01L21/76898 , H01L23/3114 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2221/6835 , H01L2224/03828 , H01L2224/11002 , H01L2224/11009 , H01L2224/11462 , H01L2224/1161 , H01L2224/1162 , H01L2224/13009 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13611 , H01L2224/13613 , H01L2224/13616 , H01L2224/13639 , H01L2224/13644 , H01L2224/13655 , H01L2224/1369 , H01L2224/14181 , H01L2224/16146 , H01L2224/16225 , H01L2224/81011 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2225/06565 , H01L2924/01327 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/1461 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
Abstract: An integrated circuit device including an interlayer insulating layer on a substrate, a wire layer on the interlayer insulating layer, and a through-silicon-via (TSV) contact pattern having an end contacting the wire layer and integrally extending from inside of a via hole formed through the interlayer insulating layer and the substrate to outside of the via hole.
Abstract translation: 一种集成电路器件，包括在衬底上的层间绝缘层，层间绝缘层上的导线层和穿过硅通孔（TSV）的接触图案，所述接触图形具有接触所述导线层的端部并且从通孔内部一体地延伸 通过层间绝缘层和基板形成到通孔的外部。
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公开(公告)号：US08987767B2
公开(公告)日：2015-03-24
申请号：US14098865
申请日：2013-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae-hwang Lee , Kyung-wook Park , Yoon-young Kwon , Jeong-woo Park , Mi-jeong Song , Yong-wan Jin
CPC classification number: H01L27/3295 , H01L51/5268
Abstract: According to example embodiments, a light emitting device includes a transparent substrate, a transparent electrode on a transparent substrate, a transparent light extraction layer at least partially on the transparent electrode, a light emitting layer on the transparent electrode, and a reflective electrode on the light extraction layer and the light emitting layer. The light extraction layer and the light emitting layer may be alternately and repeatedly arranged between the transparent electrode and the reflective electrode.
Abstract translation: 根据示例性实施例，发光器件包括透明基板，透明基板上的透明电极，至少部分透明电极上的透明光提取层，透明电极上的发光层，以及透明电极上的反射电极 光提取层和发光层。 光提取层和发光层可以交替重复地布置在透明电极和反射电极之间。
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6.发明申请INTEGRATED CIRCUIT DEVICES INCLUDING THROUGH-SILICON-VIAS HAVING INTEGRAL CONTACT PADS 有权集成电路设备，包括具有整体接触垫的穿透硅公开(公告)号：US20130175673A1
公开(公告)日：2013-07-11
申请号：US13738728
申请日：2013-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong-gi Jin , Jeong-woo Park , Ju-il Choi
IPC: H01L23/48
CPC classification number: H01L23/481 , H01L21/76898 , H01L23/3114 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2221/6835 , H01L2224/03828 , H01L2224/11002 , H01L2224/11009 , H01L2224/11462 , H01L2224/1161 , H01L2224/1162 , H01L2224/13009 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13611 , H01L2224/13613 , H01L2224/13616 , H01L2224/13639 , H01L2224/13644 , H01L2224/13655 , H01L2224/1369 , H01L2224/14181 , H01L2224/16146 , H01L2224/16225 , H01L2224/81011 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2225/06565 , H01L2924/01327 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/1461 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
Abstract: An integrated circuit device including an interlayer insulating layer on a substrate, a wire layer on the interlayer insulating layer, and a through-silicon-via (TSV) contact pattern having an end contacting the wire layer and integrally extending from inside of a via hole formed through the interlayer insulating layer and the substrate to outside of the via hole.
Abstract translation: 一种集成电路器件，包括在衬底上的层间绝缘层，层间绝缘层上的导线层和穿过硅通孔（TSV）的接触图案，所述接触图形具有接触所述导线层的端部并且从通孔内部一体地延伸 通过层间绝缘层和基板形成到通孔的外部。
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