A method is for driving a nonvolatile memory device, where the nonvolatile memory device includes a memory cell array composed of resistance memory cells. The method includes electrically connecting a clamping circuit, a line resistor and a selected one of the resistance memory cells in series between a sensing node and a ground. The method further includes adjusting at least one of a clamping voltage of the clamping circuit and a resistance of the line resistor according to a relative location of the selected one of the resistance memory cells within the memory cell array, and applying a read current to the sense node and sensing a voltage of the sense node to read a data stored in the selected one of the resistance memory cells.