Invention Grant
US08993058B2 Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices
有权
在锗或III-V半导体器件上形成硅酸钽层的方法和装置
- Patent Title: Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices
- Patent Title (中): 在锗或III-V半导体器件上形成硅酸钽层的方法和装置
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Application No.: US14010639Application Date: 2013-08-27
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Publication No.: US08993058B2Publication Date: 2015-03-31
- Inventor: Jeffrey W. Anthis , Khaled Z. Ahmed
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C23C8/12 ; H01L21/02
Abstract:
Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.
Public/Granted literature
- US20140065842A1 Methods And Apparatus For Forming Tantalum Silicate Layers On Germanium Or III-V Semiconductor Devices Public/Granted day:2014-03-06
Information query
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