Invention Grant
- Patent Title: Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection
- Patent Title (中): 选择性去除栅极结构侧壁以促进侧壁间隔件保护
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Application No.: US13740343Application Date: 2013-01-14
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Publication No.: US08993445B2Publication Date: 2015-03-31
- Inventor: Dae-Han Choi , Dae Geun Yang , Chang Ho Maeng , Wontae Hwang
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Kevin P. Radigan, Esq.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/311 ; B44C1/22 ; C25F3/00 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01L29/40

Abstract:
Methods are provided for facilitating fabricating a semiconductor device by selectively etching a gate structure sidewall(s) to facilitate subsequent sidewall spacer isolation. The method includes, for instance: providing a gate structure with a protective layer(s) over the gate structure, the gate structure including one or more sidewalls; selectively removing a portion of the gate structure along at least one sidewall to partially undercut the protective layer(s); and forming a sidewall spacer(s) over the sidewall(s) of the gate structure, with a portion of the sidewall spacer at least partially filling the partial undercut of the protective layer(s), and residing below the protective layer(s). In certain embodiments, the selectively removing includes implanting the sidewall(s) with a dopant to produce a doped region(s) of the gate structure, and subsequently, at least partially removing the doped region(s) of the gate structure selective to an undoped region of the gate structure.
Public/Granted literature
- US20140199845A1 SELECTIVE REMOVAL OF GATE STRUCTURE SIDEWALL(S) TO FACILITATE SIDEWALL SPACER PROTECTION Public/Granted day:2014-07-17
Information query
IPC分类: