Invention Grant
- Patent Title: Hardened photodiode image sensor
- Patent Title (中): 硬化光电二极管图像传感器
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Application No.: US13710260Application Date: 2012-12-10
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Publication No.: US08994138B2Publication Date: 2015-03-31
- Inventor: François Roy , Sebastien Place
- Applicant: STMicroelectronics S.A. , STMicroelectronics (Crolles2) SAS
- Applicant Address: FR Montrouge FR Crolles
- Assignee: STMicroelectronics S.A.,STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics S.A.,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Montrouge FR Crolles
- Agency: Seed IP Law Group PLLC
- Priority: FR1161775 20111216
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18 ; H04N5/76

Abstract:
An image sensor including a pixel array, each pixel including, in a substrate of a doped semiconductor material of a first conductivity type, a first doped region of a second conductivity type at the surface of the substrate; an insulating trench surrounding the first region; a second doped region of the first conductivity type, more heavily doped than the substrate, at the surface of the substrate and surrounding the trench; a third doped region of the second conductivity type, forming with the substrate a photodiode junction, extending in depth into the substrate under the first and second regions and being connected to the first region; and a fourth region, more lightly doped than the second and third regions, interposed between the second and third regions and in contact with the first region and/or with the third region.
Public/Granted literature
- US20130155283A1 HARDENED PHOTODIODE IMAGE SENSOR Public/Granted day:2013-06-20
Information query
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