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公开(公告)号：US08994138B2
公开(公告)日：2015-03-31
申请号：US13710260
申请日：2012-12-10
Applicant: STMicroelectronics S.A. , STMicroelectronics (Crolles2) SAS
Inventor： François Roy , Sebastien Place
IPC: H01L27/146 , H01L31/18 , H04N5/76
CPC classification number: H01L27/14643 , H01L27/1461 , H01L27/1463 , H01L31/18 , H04N5/76
Abstract: An image sensor including a pixel array, each pixel including, in a substrate of a doped semiconductor material of a first conductivity type, a first doped region of a second conductivity type at the surface of the substrate; an insulating trench surrounding the first region; a second doped region of the first conductivity type, more heavily doped than the substrate, at the surface of the substrate and surrounding the trench; a third doped region of the second conductivity type, forming with the substrate a photodiode junction, extending in depth into the substrate under the first and second regions and being connected to the first region; and a fourth region, more lightly doped than the second and third regions, interposed between the second and third regions and in contact with the first region and/or with the third region.
Abstract translation: 一种图像传感器，包括像素阵列，每个像素包括在第一导电类型的掺杂半导体材料的衬底中，在衬底的表面处具有第二导电类型的第一掺杂区域; 围绕所述第一区域的绝缘沟槽; 第一导电类型的第二掺杂区域，在衬底的表面上比衬底更重掺杂并且围绕沟槽; 第二导电类型的第三掺杂区域，与衬底一起形成光电二极管结，在第一和第二区域下方深度延伸到衬底中，并连接到第一区域; 以及介于所述第二和第三区域之间并与所述第一区域和/或与所述第三区域接触的比所述第二和第三区域更轻掺杂的第四区域。
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公开(公告)号：US20130155283A1
公开(公告)日：2013-06-20
申请号：US13710260
申请日：2012-12-10
Applicant: STMicroelectronics S.A. , STMicroelectronics (Crolles2) SAS
Inventor： François Roy , Sebastien Place
IPC: H01L27/146 , H04N5/76 , H01L31/18
CPC classification number: H01L27/14643 , H01L27/1461 , H01L27/1463 , H01L31/18 , H04N5/76
Abstract: An image sensor including a pixel array, each pixel including, in a substrate of a doped semiconductor material of a first conductivity type, a first doped region of a second conductivity type at the surface of the substrate; an insulating trench surrounding the first region; a second doped region of the first conductivity type, more heavily doped than the substrate, at the surface of the substrate and surrounding the trench; a third doped region of the second conductivity type, forming with the substrate a photodiode junction, extending in depth into the substrate under the first and second regions and being connected to the first region; and a fourth region, more lightly doped than the second and third regions, interposed between the second and third regions and in contact with the first region and/or with the third region.
Abstract translation: 一种图像传感器，包括像素阵列，每个像素包括在第一导电类型的掺杂半导体材料的衬底中，在衬底的表面处具有第二导电类型的第一掺杂区域; 围绕所述第一区域的绝缘沟槽; 第一导电类型的第二掺杂区域，在衬底的表面上比衬底更重掺杂并且围绕沟槽; 第二导电类型的第三掺杂区域，与衬底一起形成光电二极管结，在第一和第二区域下方深度延伸到衬底中，并连接到第一区域; 以及介于所述第二和第三区域之间并与所述第一区域和/或与所述第三区域接触的比所述第二和第三区域更轻掺杂的第四区域。
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公开(公告)号：US09236407B2
公开(公告)日：2016-01-12
申请号：US14144168
申请日：2013-12-30
Inventor： François Roy , Yvon Cazaux
IPC: H01L27/146
CPC classification number: H01L27/14603 , H01L27/14614 , H01L27/1463 , H01L27/14656
Abstract: An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area.
Abstract translation: 布置在半导体衬底的内部和顶部的具有多个像素的图像传感器，每个像素包括：感光区域，读取区域和在感光区域和读取区域之间延伸的存储区域; 至少一个第一绝缘垂直电极，其在所述基板中在所述光敏区域和所述存储区域之间延伸; 以及在所述存储区域和所述读取区域之间的所述衬底中延伸的至少一个第二绝缘垂直电极。
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Patent Agency Ranking
公开(公告)号：US20140004644A1
公开(公告)日：2014-01-02
申请号：US13858481
申请日：2013-04-08
Inventor： François Roy , Lucile Broussous , Julien Michelot , Jean-Pierre Oddou
IPC: H01L31/18
CPC classification number: H01L31/18 , H01L27/14605
Abstract: A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.
Abstract translation: 一种用于制造图像传感器的方法，包括以下连续步骤：形成半导体材料的列; 在每个列的第一端形成一个或几个像素; 并且使结构变形，使得每个柱的第二端彼此靠近或彼此拉开，以形成多面体盖的形状的表面。
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公开(公告)号：US20140217541A1
公开(公告)日：2014-08-07
申请号：US14247084
申请日：2014-04-07
Inventor： Michel Marty , François Roy , Jens Prima
IPC: H01L27/146
CPC classification number: H01L27/1464 , H01L27/1463 , H01L27/14683 , H01L27/14687 , H01L27/14689
Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.
Abstract translation: 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。
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公开(公告)号：US20140183685A1
公开(公告)日：2014-07-03
申请号：US14144168
申请日：2013-12-30
Inventor： François Roy , Yvon Cazaux
IPC: H01L27/146
CPC classification number: H01L27/14603 , H01L27/14614 , H01L27/1463 , H01L27/14656
Abstract: An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area.
Abstract translation: 布置在半导体衬底的内部和顶部的具有多个像素的图像传感器，每个像素包括：感光区域，读取区域和在感光区域和读取区域之间延伸的存储区域; 至少一个第一绝缘垂直电极，其在所述基板中在所述光敏区域和所述存储区域之间延伸; 以及在所述存储区域和所述读取区域之间的所述衬底中延伸的至少一个第二绝缘垂直电极。
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公开(公告)号：US09099604B2
公开(公告)日：2015-08-04
申请号：US13858481
申请日：2013-04-08
Inventor： François Roy , Lucile Broussous , Julien Michelot , Jean-Pierre Oddou
IPC: H01L21/00 , H01L31/18 , H01L27/146
CPC classification number: H01L31/18 , H01L27/14605
Abstract: A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.
Abstract translation: 一种用于制造图像传感器的方法，包括以下连续步骤：形成半导体材料的列; 在每个列的第一端形成一个或几个像素; 并且使结构变形使得每个柱的第二端彼此靠近或彼此拉开以形成多面体盖的形状的表面。
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公开(公告)号：US08963273B2
公开(公告)日：2015-02-24
申请号：US14247084
申请日：2014-04-07
Inventor： Michel Marty , François Roy , Jens Prima
IPC: H01L31/00 , H01L27/146
CPC classification number: H01L27/1464 , H01L27/1463 , H01L27/14683 , H01L27/14687 , H01L27/14689
Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.
Abstract translation: 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。
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