发明授权
US08999621B2 Pattern forming method, chemical amplification resist composition and resist film
有权
图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
- 专利标题： Pattern forming method, chemical amplification resist composition and resist film
- 专利标题（中）： 图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
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申请号： US13390847申请日： 2010-10-05
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公开(公告)号： US08999621B2公开(公告)日： 2015-04-07
- 发明人: Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
- 申请人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2009-232706 20091006; JP2009-285584 20091216
- 国际申请： PCT/JP2010/067808 WO 20101005
- 国际公布： WO2011/043481 WO 20110414
- 主分类号： G03F7/038
- IPC分类号： G03F7/038 ; G03F7/30 ; G03F7/039 ; G03F7/20 ; G03F7/32
摘要：
A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.
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