Invention Grant
- Patent Title: Method of forming fine patterns of semiconductor device
- Patent Title (中): 形成半导体器件精细图案的方法
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Application No.: US13939664Application Date: 2013-07-11
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Publication No.: US08999840B2Publication Date: 2015-04-07
- Inventor: Cha-won Koh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/308 ; H01L21/02 ; H01L21/311 ; G03F7/09
Abstract:
A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light, forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area, developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film, exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film, and removing the acid-extinguisher containing film exposed through the space.
Public/Granted literature
- US20150017808A1 METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE Public/Granted day:2015-01-15
Information query
IPC分类:
