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Patent Agency Ranking
公开(公告)号：US10688437B2
公开(公告)日：2020-06-23
申请号：US16122454
申请日：2018-09-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Cha-won Koh , Oleg Feygenson , Jung-hyeon Kim , Hyun-woo Kim , Eun-sung Kim
Abstract: A filter structure for chemical solution used in manufacturing an integrated circuit includes: a first membrane structure comprising a plurality of membrane units, each comprising a cathode comprising a plurality of first openings, an anode comprising a plurality of second openings, and an insulating layer between the cathode and the anode; and a filter housing configured to receive the first membrane structure therein, the filter housing comprising an inlet through which the chemical solution is introduced and an outlet through which the chemical solution is discharged. The first membrane structure is configured such that when an electric field is applied between the cathode and the anode while the chemical solution introduced through the inlet passes through the first membrane structure, impurities having both positively charged particles and negatively charged particles in the chemical solution are trapped in the first membrane structure.
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公开(公告)号：US09412604B2
公开(公告)日：2016-08-09
申请号：US14692330
申请日：2015-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Cha-won Koh , Hyun-woo Kim , Jong-soo Kim , Jin Park , Hyung-rae Lee
IPC: H01L21/30 , H01L21/306 , H01L21/308 , H01L21/027 , H01L21/02
CPC classification number: H01L21/30604 , H01L21/02118 , H01L21/02343 , H01L21/02345 , H01L21/0273 , H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/31144 , H01L21/32139
Abstract: The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.
Abstract translation: 本发明构思提供了制造半导体器件的方法，包括在蚀刻靶膜上形成内掩模层，内掩模层包括聚合物; 在所述蚀刻目标膜上形成多孔膜，所述多孔膜覆盖所述内掩模层; 通过多孔膜将酸源供给到内掩模层的外表面区域; 通过使用酸源在外表面区域引起包含在内掩模层中的聚合物的化学反应; 通过去除内部掩模层的化学反应部分形成内部掩模图案; 并且通过使用至少一部分多孔膜和内部掩模图案作为蚀刻掩模来蚀刻蚀刻目标膜。
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公开(公告)号：US20160049306A1
公开(公告)日：2016-02-18
申请号：US14692330
申请日：2015-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Cha-won Koh , Hyun-woo Kim , Jong-soo Kim , Jin Park , Hyung-rae Lee
IPC: H01L21/306 , H01L21/027 , H01L21/02 , H01L21/308
CPC classification number: H01L21/30604 , H01L21/02118 , H01L21/02343 , H01L21/02345 , H01L21/0273 , H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/31144 , H01L21/32139
Abstract: The present inventive concept provides methods of manufacturing a semiconductor device including forming an inner mask layer on an etching target film, the inner mask layer including a polymer; forming a porous film on the etching target film, the porous film covering the inner mask layer; supplying an acid source to an outer surface area of the inner mask layer through the porous film; inducing a chemical reaction of the polymer included in the inner mask layer in the outer surface area by using the acid source; forming inner mask patterns by removing a chemically reacted portion of the inner mask layer; and etching the etching target film by using at least a portion of the porous film and the inner mask patterns as an etching mask.
Abstract translation: 本发明构思提供了制造半导体器件的方法，包括在蚀刻靶膜上形成内掩模层，内掩模层包括聚合物; 在所述蚀刻目标膜上形成多孔膜，所述多孔膜覆盖所述内掩模层; 通过多孔膜将酸源供给到内掩模层的外表面区域; 通过使用酸源在外表面区域引起包含在内掩模层中的聚合物的化学反应; 通过去除内部掩模层的化学反应部分形成内部掩模图案; 并且通过使用至少一部分多孔膜和内部掩模图案作为蚀刻掩模来蚀刻蚀刻目标膜。
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公开(公告)号：US20190232227A1
公开(公告)日：2019-08-01
申请号：US16122454
申请日：2018-09-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Cha-won Koh , Oleg Feygenson , Jung-hyeon Kim , Hyun-woo Kim , Eun-sung Kim
Abstract: A filter structure for chemical solution used in manufacturing an integrated circuit includes: a first membrane structure comprising a plurality of membrane units, each comprising a cathode comprising a plurality of first openings, an anode comprising a plurality of second openings, and an insulating layer between the cathode and the anode; and a filter housing configured to receive the first membrane structure therein, the filter housing comprising an inlet through which the chemical solution is introduced and an outlet through which the chemical solution is discharged. The first membrane structure is configured such that when an electric field is applied between the cathode and the anode while the chemical solution introduced through the inlet passes through the first membrane structure, impurities having both positively charged particles and negatively charged particles in the chemical solution are trapped in the first membrane structure.
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公开(公告)号：US08999840B2
公开(公告)日：2015-04-07
申请号：US13939664
申请日：2013-07-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Cha-won Koh
IPC: H01L21/027 , H01L21/308 , H01L21/02 , H01L21/311 , G03F7/09
CPC classification number: H01L21/0274 , G03F7/091 , H01L21/0206 , H01L21/02271 , H01L21/0271 , H01L21/0276 , H01L21/0332 , H01L21/3081 , H01L21/3088 , H01L21/31144 , H01L21/32139 , Y10S438/948 , Y10S438/949 , Y10S438/952
Abstract: A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light, forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area, developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film, exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film, and removing the acid-extinguisher containing film exposed through the space.
Abstract translation: 形成半导体器件的微图案的方法可以包括在基板上形成含有灭火器的膜，在含有灭火器的膜上形成含有电位酸的光致抗蚀剂膜，通过暴露部分 的光致抗蚀剂膜发光，通过在含灭火剂的膜和暴露区域之间的界面处灭灭暴露区域的酸而在含灭火器的膜和暴露区域之间形成不溶性聚合物薄膜， 膜以形成暴露区域中的不溶性聚合物薄膜的空间和与不溶性聚合物薄膜一体连接的光致抗蚀剂图案，通过除去不溶性聚合物薄膜使含有灭火剂的膜暴露于该空间，并除去酸 - 含有灭火剂的薄膜暴露在空间内。
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