Invention Grant
- Patent Title: Pixel structure with multiple transfer gates
- Patent Title (中): 具有多个传输门的像素结构
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Application No.: US12977935Application Date: 2010-12-23
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Publication No.: US09001245B2Publication Date: 2015-04-07
- Inventor: Xinyang Wang , Guy Meynants , Bram Wolfs
- Applicant: Xinyang Wang , Guy Meynants , Bram Wolfs
- Applicant Address: BE Antwerp
- Assignee: Cmosis NV
- Current Assignee: Cmosis NV
- Current Assignee Address: BE Antwerp
- Agency: Bacon & Thomas, PLLC
- Priority: GB1000523.9 20100113
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/335 ; H04N5/374 ; H04N5/3745 ; H04N5/355

Abstract:
A pixel structure comprises a photo-sensitive element for generating charge in response to incident light. A first transfer gate is connected between the photo-sensitive element and a first charge conversion element. A second transfer gate is connected between the photo-sensitive element and a second charge conversion element. An output stage outputs a first value related to charge at the first charge conversion element and outputs a second value related to charge at the second charge conversion element. A controller controls operation of the pixel structures and causes a pixel structure. The controller causes the pixel structure to: acquire charges on the photo-sensitive element during an exposure period; transfer a first portion of the charges acquired during the exposure period from the photo-sensitive element to the first charge conversion element via the first transfer gate; and transfer a second portion of the charges acquired during the exposure period from the photo-sensitive element to the second charge conversion element via the second transfer gate.
Public/Granted literature
- US20120002089A1 PIXEL STRUCTURE WITH MULTIPLE TRANSFER GATES Public/Granted day:2012-01-05
Information query
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