发明授权
US09005705B2 Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method
有权
用于生产具有包含铜的涂层的基材的方法,以及通过该方法制备的涂布的基材和装置
- 专利标题: Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method
- 专利标题(中): 用于生产具有包含铜的涂层的基材的方法,以及通过该方法制备的涂布的基材和装置
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申请号: US13232569申请日: 2011-09-14
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公开(公告)号: US09005705B2公开(公告)日: 2015-04-14
- 发明人: Thomas Waechtler , Stefan Schulz , Thomas Gessner , Steve Mueller , André Tuchscherer , Heinrich Lang
- 申请人: Thomas Waechtler , Stefan Schulz , Thomas Gessner , Steve Mueller , André Tuchscherer , Heinrich Lang
- 申请人地址: DE Munich DE Chemnitz
- 专利权人: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.,Technische Universitaet Chemnitz
- 当前专利权人: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.,Technische Universitaet Chemnitz
- 当前专利权人地址: DE Munich DE Chemnitz
- 代理机构: Greenblum & Bernstein, P.L.C.
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23C16/18 ; H01L21/768 ; H01L21/285 ; C23C16/455
摘要:
A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.
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