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1.发明授权Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method 有权用于生产具有包含铜的涂层的基材的方法，以及通过该方法制备的涂布的基材和装置公开(公告)号：US09005705B2
公开(公告)日：2015-04-14
申请号：US13232569
申请日：2011-09-14
申请人： Thomas Waechtler , Stefan Schulz , Thomas Gessner , Steve Mueller , André Tuchscherer , Heinrich Lang
发明人： Thomas Waechtler , Stefan Schulz , Thomas Gessner , Steve Mueller , André Tuchscherer , Heinrich Lang
IPC分类号： C23C16/00 , C23C16/18 , H01L21/768 , H01L21/285 , C23C16/455
CPC分类号： C23C16/18 , C23C16/45553 , H01L21/28562 , H01L21/76873 , H01L21/76898
摘要： A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.
摘要翻译： 公开了一种用铜或含铜涂层制造衬底的方法。 该方法包括第一步骤，其中提供第一前体，第二前体和基底。 第一前体是不含氟的铜络合物，第二前体选自钌络合物，镍络合物，钯络合物或其混合物。 在第二步骤中，通过使用第一前体和第二前体借助于原子层沉积（ALD），至少在衬底的表面的部分区域上沉积一层。 用于ALD的第一前体：第二前体的摩尔比从90:10延伸至99.99:0.01。 所得层含有铜和钌，镍和钯中的至少一种。 最后，进行还原反应，其中还原剂作用于在沉积含铜层之后获得的基板上。
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2.发明申请METHOD FOR THE PRODUCTION OF A SUBSTRATE HAVING A COATING COMPRISING COPPER, AND COATED SUBSTRATE AND DEVICE PREPARED BY THIS METHOD 有权用于生产包含铜的涂层的基材的方法和涂覆的基材和通过该方法制备的装置公开(公告)号：US20130062768A1
公开(公告)日：2013-03-14
申请号：US13232569
申请日：2011-09-14
申请人： Thomas WAECHTLER , Stefan SCHULZ , Thomas GESSNER , Steve MUELLER , André TUCHSCHERER , Heinrich LANG
发明人： Thomas WAECHTLER , Stefan SCHULZ , Thomas GESSNER , Steve MUELLER , André TUCHSCHERER , Heinrich LANG
CPC分类号： C23C16/18 , C23C16/45553 , H01L21/28562 , H01L21/76873 , H01L21/76898
摘要： A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.
摘要翻译： 公开了一种用铜或含铜涂层制造衬底的方法。 该方法包括第一步骤，其中提供第一前体，第二前体和基底。 第一前体是不含氟的铜络合物，第二前体选自钌络合物，镍络合物，钯络合物或其混合物。 在第二步骤中，通过使用第一前体和第二前体借助于原子层沉积（ALD），至少在衬底的表面的部分区域上沉积一层。 用于ALD的第一前体：第二前体的摩尔比从90:10延伸至99.99:0.01。 所得层含有铜和钌，镍和钯中的至少一种。 最后，进行还原反应，其中还原剂作用于在沉积含铜层之后获得的基板上。
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