发明授权
- 专利标题： Amorphous silicon film formation method and amorphous silicon film formation apparatus
- 专利标题（中）： 非晶硅膜形成方法和非晶硅膜形成装置
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申请号： US13094043申请日： 2011-04-26
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公开(公告)号： US09006021B2公开(公告)日： 2015-04-14
- 发明人: Kazuhide Hasebe , Hiroki Murakami , Akinobu Kakimoto
- 申请人： Kazuhide Hasebe , Hiroki Murakami , Akinobu Kakimoto
- 申请人地址： JP
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP
- 代理机构： Cantor Colburn LLP
- 优先权： JP2010-102405 20100427; JP2011-044014 20110301
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; C23C16/24 ; C23C16/02
摘要：
The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.