Invention Grant
US09006049B2 Fabricating photonics devices fully integrated into a CMOS manufacturing process
有权
制造完全集成到CMOS制造工艺中的光子器件
- Patent Title: Fabricating photonics devices fully integrated into a CMOS manufacturing process
- Patent Title (中): 制造完全集成到CMOS制造工艺中的光子器件
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Application No.: US14085752Application Date: 2013-11-20
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Publication No.: US09006049B2Publication Date: 2015-04-14
- Inventor: Solomon Assefa , William M. J. Green , Yurii A. Vlasov , Min Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Law Offices of Ira D. Blecker, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L21/762 ; G02B6/136 ; H01L31/0232 ; H01L31/103 ; H01L31/105 ; H01L21/265
Abstract:
Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics devices include a ridged waveguide and a germanium photodetector. The germanium photodetector may utilize a seeded crystallization from melt process so there is more flexibility in the processing of the germanium photodetector.
Public/Granted literature
- US20140080269A1 FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACTURING PROCESS Public/Granted day:2014-03-20
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