Invention Grant
US09006705B2 Device with strained layer for quantum well confinement and method for manufacturing thereof 有权
具有用于量子阱限制的应变层的装置及其制造方法

Device with strained layer for quantum well confinement and method for manufacturing thereof
Abstract:
The disclosed technology relates to transistors having a strained quantum well for carrier confinement, and a method for manufacturing thereof. In one aspect, a FinFET or a planar FET device comprises a semiconductor substrate, a strain-relaxed buffer layer comprising Ge formed on the semiconductor substrate, a channel layer formed on the strain-relaxed buffer layer, and a strained quantum barrier layer comprising SiGe interposed between and in contact with the strain-relaxed buffer layer and the channel layer. The compositions of the strain-relaxed buffer layer, the strained quantum barrier layer and the channel layer are chosen such that a band offset of the channel layer and a band offset of the strained quantum barrier layer have opposite signs with respect to the strain-relaxed buffer layer.
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