Invention Grant
- Patent Title: Device with strained layer for quantum well confinement and method for manufacturing thereof
- Patent Title (中): 具有用于量子阱限制的应变层的装置及其制造方法
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Application No.: US13914514Application Date: 2013-06-10
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Publication No.: US09006705B2Publication Date: 2015-04-14
- Inventor: Geert Eneman , David Brunco , Geert Hellings
- Applicant: IMEC , GLOBALFOUNDRIES Inc.
- Applicant Address: BE Leuven KY Grand Cayman
- Assignee: IMEC,GLOBALFOUNDRIES Inc.
- Current Assignee: IMEC,GLOBALFOUNDRIES Inc.
- Current Assignee Address: BE Leuven KY Grand Cayman
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/775 ; H01L29/778 ; H01L29/161 ; H01L29/165 ; H01L29/10 ; B82Y10/00

Abstract:
The disclosed technology relates to transistors having a strained quantum well for carrier confinement, and a method for manufacturing thereof. In one aspect, a FinFET or a planar FET device comprises a semiconductor substrate, a strain-relaxed buffer layer comprising Ge formed on the semiconductor substrate, a channel layer formed on the strain-relaxed buffer layer, and a strained quantum barrier layer comprising SiGe interposed between and in contact with the strain-relaxed buffer layer and the channel layer. The compositions of the strain-relaxed buffer layer, the strained quantum barrier layer and the channel layer are chosen such that a band offset of the channel layer and a band offset of the strained quantum barrier layer have opposite signs with respect to the strain-relaxed buffer layer.
Public/Granted literature
- US20140054547A1 DEVICE WITH STRAINED LAYER FOR QUANTUM WELL CONFINEMENT AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2014-02-27
Information query
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