Invention Grant
US09007839B2 Nonvolatile memory device performing read operation with variable read voltage
有权
非易失性存储器件以可变的读取电压进行读取操作
- Patent Title: Nonvolatile memory device performing read operation with variable read voltage
- Patent Title (中): 非易失性存储器件以可变的读取电压进行读取操作
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Application No.: US13915688Application Date: 2013-06-12
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Publication No.: US09007839B2Publication Date: 2015-04-14
- Inventor: Ji-Sang Lee , Moosung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0073979 20120706
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/26 ; G11C11/56 ; G11C16/34
Abstract:
A method of reading a nonvolatile memory device comprises applying a read voltage to a memory cell array to read selected memory cells, counting a number of the selected memory cells that have a threshold voltage higher or lower than the read voltage, and comparing the counted number with a reference value to determine a number of bits stored in the selected memory cells.
Public/Granted literature
- US20140010017A1 NONVOLATILE MEMORY DEVICE PERFORMING READ OPERATION WITH VARIABLE READ VOLTAGE Public/Granted day:2014-01-09
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