Invention Grant
- Patent Title: Reducing memory refresh exit time
- Patent Title (中): 减少内存刷新退出时间
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Application No.: US13938130Application Date: 2013-07-09
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Publication No.: US09007862B2Publication Date: 2015-04-14
- Inventor: Frederick A. Ware , Brent Haukness , Ian P. Shaeffer , James E. Harris
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Fenwick & West LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/406 ; G11C7/10

Abstract:
Components of a memory system, such as a memory controller and a memory device, that reduce delay in exiting self-refresh mode by controlling the refresh timing of the memory device. The memory device includes a memory core. An interface circuit of the memory device receives an external refresh signal indicating an intermittent refresh event. A refresh circuit of the memory device generates an internal refresh signal indicating an internal refresh event of the memory device. A refresh control circuit of the memory device performs a refresh operation on a portion of the memory core responsive to the internal refresh event, at a time relative to the intermittent refresh event indicated by the external refresh signal.
Public/Granted literature
- US20140016423A1 Reducing Memory Refresh Exit Time Public/Granted day:2014-01-16
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