发明授权
US09012999B2 Semiconductor device with an inclined source/drain and associated methods
有权
具有倾斜源极/漏极和相关方法的半导体器件
- 专利标题： Semiconductor device with an inclined source/drain and associated methods
- 专利标题（中）： 具有倾斜源极/漏极和相关方法的半导体器件
-
申请号： US13590548申请日： 2012-08-21
-
公开(公告)号： US09012999B2公开(公告)日： 2015-04-21
- 发明人: Qing Liu , Prasanna Khare , Nicolas Loubet
- 申请人： Qing Liu , Prasanna Khare , Nicolas Loubet
- 申请人地址： US TX Coppell
- 专利权人： STMicroelectronics, Inc.
- 当前专利权人： STMicroelectronics, Inc.
- 当前专利权人地址： US TX Coppell
- 代理机构： Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8238 ; H01L21/70 ; H01L21/8234
摘要：
A semiconductor device includes a semiconductor substrate having a channel region therein, a gate structure above the channel region, and source and drain regions on opposite sides of the gate structure. A respective contact is on each of the source and drain regions. At least one of the source and drain regions has an inclined upper contact surface with the respective contact. The inclined upper contact surface has at least a 50% greater area than would a corresponding flat contact surface.