Invention Grant
- Patent Title: Stress reduced cascoded CMOS output driver circuit
- Patent Title (中): 降压级联CMOS输出驱动电路
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Application No.: US13931343Application Date: 2013-06-28
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Publication No.: US09013212B2Publication Date: 2015-04-21
- Inventor: Vinod Kumar
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Amsterdam
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: NL Amsterdam
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H03B1/00
- IPC: H03B1/00 ; G11C7/10 ; H03K3/02

Abstract:
An output driver circuit includes first, second, third, and fourth transistors having a common current path, wherein a gate of the first transistor receives a first switching signal, a gate of the second transistor receives a first reference voltage, a gate of the third transistor receives a second reference voltage, and a gate of the fourth transistor receives a second switching signal, and wherein a first capacitor is coupled between the gate of the first transistor and the gate of the third transistor, a second capacitor is coupled between the gate of the second transistor and the gate of the fourth transistor, and an output signal is provided at a node coupling the second and third transistors.
Public/Granted literature
- US20130285708A1 STRESS REDUCED CASCODED CMOS OUTPUT DRIVER CIRCUIT Public/Granted day:2013-10-31
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