发明授权
- 专利标题: System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon
- 专利标题(中): 多晶硅制造系统,多晶硅制造装置及多晶硅制造方法
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申请号: US13496060申请日: 2010-07-20
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公开(公告)号: US09017482B2公开(公告)日: 2015-04-28
- 发明人: Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
- 申请人: Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2009-211806 20090914
- 国际申请: PCT/JP2010/004647 WO 20100720
- 国际公布: WO2011/030495 WO 20110317
- 主分类号: C01B33/035
- IPC分类号: C01B33/035 ; B01J19/02 ; C23C16/44 ; C23C16/54 ; C23C16/24 ; C23C16/52
摘要:
The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.