Invention Grant
- Patent Title: Method for forming layer constituted by repeated stacked layers
- Patent Title (中): 由重复堆叠层构成的形成层的方法
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Application No.: US13749878Application Date: 2013-01-25
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Publication No.: US09018093B2Publication Date: 2015-04-28
- Inventor: Naoto Tsuji , Fumitaka Shoji
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/4763 ; H01L21/02 ; H01L21/311 ; H01L21/3205 ; H01L21/3213 ; C23C16/30 ; C23C16/455

Abstract:
A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.
Public/Granted literature
- US20140213065A1 Method for Forming Layer Constituted by Repeated Stacked Layers Public/Granted day:2014-07-31
Information query
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