公开(公告)号：US20210225622A1

公开(公告)日：2021-07-22

申请号：US17147827

申请日：2021-01-13

Applicant: ASM IP Holding B.V.

Inventor： Fumitaka Shoji

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: Examples of a substrate treatment apparatus include an output device configured to output a plasma-related signal which is a signal obtained in association with plasma treatment used for the substrate treatment, and a controller configured to monitor an integrated value of the plasma-related signal received directly or indirectly from the output device.

公开(公告)号：US10734219B2

公开(公告)日：2020-08-04

申请号：US16142793

申请日：2018-09-26

Applicant: ASM IP Holding B.V.

Inventor： Fumitaka Shoji

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/40

Abstract: Examples of a plasma film forming method include repeating feeding material gas onto a substrate placed on a susceptor via a shower head provided to oppose the susceptor, performing plasma film formation on the substrate by applying high frequency power to the shower head while providing reactant gas onto the substrate, and performing post-purge of discharging the gas used in the plasma film formation while heating the shower head, for a time longer than 0.1 seconds, a plurality of times in this order.

公开(公告)号：US20140349033A1

公开(公告)日：2014-11-27

申请号：US13901400

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Yuya Nonaka ,  Fumitaka Shoji ,  Hiroki Arai

IPC: C23C16/505

CPC classification number: C23C16/045 ,  C23C16/5096 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract translation: 通过等离子体辅助沉积在基板上形成电介质膜的方法包括：将含Si工艺气体引入反应空间，其中放置具有图案化凹坑的表面的基板; 并对反应空间中的处理气体施加RF功率，以通过等离子体反应在表面上形成电介质膜。 RF功率包括高频RF功率的脉冲和低频RF功率的脉冲，其重叠并同步。

公开(公告)号：US20140213065A1

公开(公告)日：2014-07-31

申请号：US13749878

申请日：2013-01-25

Applicant: ASM IP HOLDING B.V.

Inventor： Naoto Tsuji ,  Fumitaka Shoji

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32055 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/76832

Abstract: A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.

Abstract translation: 用于形成由重复堆叠层构成的层的方法包括：在不同沉积条件下在衬底上形成第一层和第二层以形成堆叠层，其中第一层和第二层的膜应力是拉伸的或压缩的和相反的 并且第一和第二层的湿蚀刻速率彼此至少是50次不同; 并重复上述步骤以形成由重复堆叠层构成的层，其中用于形成至少一层叠层的沉积条件与用于形成另一层叠层的沉积条件不同。

公开(公告)号：US20210348273A1

公开(公告)日：2021-11-11

申请号：US17307643

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： Ryu Nakano ,  Fumitaka Shoji

IPC: C23C16/458 ,  H01L21/683

Abstract: A susceptor assembly for a reactor system may comprise a susceptor body defined by a susceptor outer edge, the susceptor body comprising a susceptor outer portion and a susceptor inner portion, wherein the susceptor outer portion is proximate the susceptor outer edge, and the susceptor inner portion is at least partially enclosed within the susceptor outer portion; a first tuning circuit comprising an edge electrode and a first resonance circuit coupled to the edge electrode, wherein the edge electrode is coupled to the susceptor body; a second tuning circuit comprising a center electrode and a second resonance circuit coupled to the center electrode, wherein the center electrode is coupled to the susceptor body; wherein the edge electrode is disposed more proximate the susceptor outer edge than the center electrode.

公开(公告)号：US09365924B2

公开(公告)日：2016-06-14

申请号：US13901400

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Yuya Nonaka ,  Fumitaka Shoji ,  Hiroki Arai

IPC: C23C16/515 ,  C23C16/04 ,  C23C16/509 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/5096 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.

Abstract translation: 通过等离子体辅助沉积在基板上形成电介质膜的方法包括：将含Si工艺气体引入反应空间，其中放置具有图案化凹坑的表面的基板; 并对反应空间中的处理气体施加RF功率，以通过等离子体反应在表面上形成电介质膜。 RF功率包括高频RF功率的脉冲和低频RF功率的脉冲，其重叠并同步。

公开(公告)号：US09018093B2

公开(公告)日：2015-04-28

申请号：US13749878

申请日：2013-01-25

Applicant: ASM IP Holding B.V.

Inventor： Naoto Tsuji ,  Fumitaka Shoji

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32055 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/76832

Abstract: A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.

Abstract translation: 用于形成由重复堆叠层构成的层的方法包括：在不同沉积条件下在衬底上形成第一层和第二层以形成堆叠层，其中第一层和第二层的膜应力是拉伸的或压缩的和相反的 并且第一和第二层的湿蚀刻速率彼此至少是50次不同; 并重复上述步骤以形成由重复堆叠层构成的层，其中用于形成至少一层叠层的沉积条件与用于形成另一层叠层的沉积条件不同。