发明授权
- 专利标题： Reverse conducting insulated gate bipolar transistor
- 专利标题（中）： 反向导通绝缘栅双极晶体管
-
申请号： US13441364申请日： 2012-04-06
-
公开(公告)号： US09018674B2公开(公告)日： 2015-04-28
- 发明人: Dorothea Werber , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze , Franz Hirler , Alexander Philippou
- 申请人： Dorothea Werber , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze , Franz Hirler , Alexander Philippou
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/06 ; H01L29/08
摘要：
A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.
公开/授权文献
- US20130264607A1 Reverse Conducting Insulated Gate Bipolar Transistor 公开/授权日：2013-10-10
信息查询
IPC分类:
