Invention Grant
- Patent Title: Gas-diffusion barriers for MEMS encapsulation
- Patent Title (中): 用于MEMS封装的气体扩散屏障
-
Application No.: US13690112Application Date: 2012-11-30
-
Publication No.: US09018715B2Publication Date: 2015-04-28
- Inventor: Roger T. Howe , Emmanuel P. Quevy , Zhen Gu
- Applicant: Silicon Laboratories Inc.
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Abel Law Group, LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; B81B7/00

Abstract:
A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.
Public/Granted literature
- US20140151820A1 GAS-DIFFUSION BARRIERS FOR MEMS ENCAPSULATION Public/Granted day:2014-06-05
Information query
IPC分类: