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公开(公告)号：US09300227B2
公开(公告)日：2016-03-29
申请号：US13941278
申请日：2013-07-12
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Daniel N. Koury, Jr.
CPC classification number: H02N1/00 , B81B3/0081 , H03B5/30 , H03H3/013 , H03H9/02259 , H03H2007/006 , H03H2009/02291 , H03H2009/02385 , H03H2009/0248 , H03H2009/2442 , H03L1/02 , H03L1/04 , Y10T29/49005 , Y10T29/49117
Abstract: A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation.
Abstract translation: 一种技术通过形成具有悬挂电极的MEMS结构来将MEMS器件与应变源解耦，所述悬置电极机械地锚定以减少或消除应变从衬底转移到结构中的方式，或将应变传递到电极和体，使得换能器 是耐应变的。 该技术包括使用嵌入导电结构材料中的电绝缘材料进行机械耦合和电隔离。
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2.发明授权Methods and structures for thin-film encapsulation and co-integration of same with microelectronic devices and microelectromechanical systems (MEMS) 有权用于薄膜封装和与微电子器件和微机电系统（MEMS）相结合的方法和结构公开(公告)号：US09428377B2
公开(公告)日：2016-08-30
申请号：US14532658
申请日：2014-11-04
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Jeremy R. Hui , Carrie Wing-Zin Low , Mehrnaz Motiee
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.
Abstract translation: 可以在一个示例中实现的方法和结构，以共同整合用于薄膜封装和形成微电子器件和微机电系统（MEMS）例如传感器和致动器的过程。 例如，可以使用相同的基本工艺流程来制造具有不同特性的结构，通过选择与基本工艺流程一起使用的不同工艺选项或模块以便创建所需的结构。 可以通过各种公开的处理流程序列有利地实现各种处理流程序列以及各种设备设计结构。
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3.发明申请公开(公告)号：US20160025664A1
公开(公告)日：2016-01-28
申请号：US14532723
申请日：2014-11-04
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Louis Nervegna , Jeremy R. Hui
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
Abstract translation: 捕获的牺牲结构和薄膜封装方法可用于制造捕获的牺牲结构，例如相对湿度传感器结构，以及保护在半导体管芯基板之上延伸的相邻半导体结构不被模具或其它半导体加工件接触的间隔结构 工具在与衬垫结构相邻的管芯衬底的区域中。
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4.发明申请公开(公告)号：US20160023888A1
公开(公告)日：2016-01-28
申请号：US14532658
申请日：2014-11-04
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Jeremy R. Hui , Carrie Wing-Zin Low , Mehrnaz Motiee
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences.
Abstract translation: 可以在一个示例中实现的方法和结构，以共同整合用于薄膜封装和形成微电子器件和微机电系统（MEMS）例如传感器和致动器的过程。 例如，可以使用相同的基本工艺流程来制造具有不同特性的结构，通过选择与基本工艺流程一起使用的不同工艺选项或模块以便创建所需的结构。 可以通过各种公开的处理流程序列有利地实现各种处理流程序列以及各种设备设计结构。
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公开(公告)号：US09246412B2
公开(公告)日：2016-01-26
申请号：US14029931
申请日：2013-09-18
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Daniel N. Koury, Jr.
IPC: H03L1/02 , H02N1/00 , H03B5/30 , H03H3/013 , H03H9/02 , B81B3/00 , H03L1/04 , H03H7/00 , H03H9/24
CPC classification number: H02N1/00 , B81B3/0081 , H03B5/30 , H03H3/013 , H03H9/02259 , H03H2007/006 , H03H2009/02291 , H03H2009/02385 , H03H2009/0248 , H03H2009/2442 , H03L1/02 , H03L1/04 , Y10T29/49005 , Y10T29/49117
Abstract: A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation. An apparatus includes a MEMS device including a first electrode and a second electrode, and a body suspended from a substrate of the MEMS device. The body and the first electrode form a first electrostatic transducer. The body and the second electrode form a second electrostatic transducer. The apparatus includes a suspended passive element mechanically coupled to the body and electrically isolated from the body.
Abstract translation: 一种技术通过形成具有悬挂电极的MEMS结构来将MEMS器件与应变源解耦，所述悬置电极机械地锚定以减少或消除应变从衬底转移到结构中的方式，或将应变传递到电极和体，使得换能器 是耐应变的。 该技术包括使用嵌入导电结构材料中的电绝缘材料进行机械耦合和电隔离。 一种装置包括包括第一电极和第二电极以及从MEMS器件的衬底悬挂的主体的MEMS器件。 主体和第一电极形成第一静电换能器。 主体和第二电极形成第二静电换能器。 该装置包括机械耦合到主体并与主体电隔离的悬置的被动元件。
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Patent Agency Ranking
公开(公告)号：US20150008545A1
公开(公告)日：2015-01-08
申请号：US14494688
申请日：2014-09-24
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
IPC: B81B3/00
CPC classification number: B81B3/0062 , B81B2201/0235 , B81B2201/0242 , B81B2207/015 , B81C1/00246 , B81C2203/0735 , G01C19/5712
Abstract: An apparatus is formed on a substrate including at least one semiconductor device. The apparatus includes a microelectromechanical system (MEMS) device comprising at least one of a portion of a first structural layer and a portion of a second structural layer formed above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. In at least one embodiment, the MEMS device includes a first portion of the second structural layer and a second portion of the second structural layer. In at least one embodiment, the MEMS device further comprises a gap between the first portion of the second structural layer and the second portion of the second structural layer. In at least one embodiment, the gap has a width at least one order of magnitude less than the thickness of the second structural layer.
Abstract translation: 在包括至少一个半导体器件的衬底上形成器件。 该装置包括微机电系统（MEMS）装置，其包括形成在第一结构层上方的第一结构层的一部分和第二结构层的一部分中的至少一个。 第二结构层的厚度基本上大于第一结构层的厚度。 在至少一个实施例中，MEMS器件包括第二结构层的第一部分和第二结构层的第二部分。 在至少一个实施例中，MEMS器件还包括第二结构层的第一部分和第二结构层的第二部分之间的间隙。 在至少一个实施例中，间隙的宽度比第二结构层的厚度小至少一个数量级。
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7.发明申请公开(公告)号：US20160023889A1
公开(公告)日：2016-01-28
申请号：US14532675
申请日：2014-11-04
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Jeremy R. Hui , Carrie Wing-Zin Low
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.
Abstract translation: 提供了用于制造薄膜换能器结构和薄膜封装方法。 在一个示例中，可以实现薄膜封装方法以共同整合用于薄膜封装和形成微电子器件的工艺和包括膜换能器的微机电系统（MEMS）。
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公开(公告)号：US20140361843A1
公开(公告)日：2014-12-11
申请号：US13941278
申请日：2013-07-12
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Daniel N. Koury, Jr.
CPC classification number: H02N1/00 , B81B3/0081 , H03B5/30 , H03H3/013 , H03H9/02259 , H03H2007/006 , H03H2009/02291 , H03H2009/02385 , H03H2009/0248 , H03H2009/2442 , H03L1/02 , H03L1/04 , Y10T29/49005 , Y10T29/49117
Abstract: A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation.
Abstract translation: 一种技术通过形成具有悬挂电极的MEMS结构来将MEMS器件与应变源解耦，所述悬置电极机械地锚定以减少或消除应变从衬底转移到结构中的方式，或将应变传递到电极和体，使得换能器 是耐应变的。 该技术包括使用嵌入导电结构材料中的电绝缘材料进行机械耦合和电隔离。
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公开(公告)号：US09260290B2
公开(公告)日：2016-02-16
申请号：US14494688
申请日：2014-09-24
Applicant: Silicon Laboratories Inc.
Inventor： Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
IPC: B81B3/00 , B81C1/00 , G01C19/5712
CPC classification number: B81B3/0062 , B81B2201/0235 , B81B2201/0242 , B81B2207/015 , B81C1/00246 , B81C2203/0735 , G01C19/5712
Abstract: An apparatus is formed on a substrate including at least one semiconductor device. The apparatus includes a microelectromechanical system (MEMS) device comprising at least one of a portion of a first structural layer and a portion of a second structural layer formed above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. In at least one embodiment, the MEMS device includes a first portion of the second structural layer and a second portion of the second structural layer. In at least one embodiment, the MEMS device further comprises a gap between the first portion of the second structural layer and the second portion of the second structural layer. In at least one embodiment, the gap has a width at least one order of magnitude less than the thickness of the second structural layer.
Abstract translation: 在包括至少一个半导体器件的衬底上形成器件。 该装置包括微机电系统（MEMS）装置，其包括形成在第一结构层上方的第一结构层的一部分和第二结构层的一部分中的至少一个。 第二结构层的厚度基本上大于第一结构层的厚度。 在至少一个实施例中，MEMS器件包括第二结构层的第一部分和第二结构层的第二部分。 在至少一个实施例中，MEMS器件还包括第二结构层的第一部分和第二结构层的第二部分之间的间隙。 在至少一个实施例中，间隙的宽度比第二结构层的厚度小至少一个数量级。
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公开(公告)号：US09000833B2
公开(公告)日：2015-04-07
申请号：US13786686
申请日：2013-03-06
Applicant: Silicon Laboratories Inc.
Inventor： Aaron Caffee , Emmanuel P. Quevy
CPC classification number: H02N1/006 , B81B7/0045 , B81B7/008 , B81B2203/0118 , B81B2207/015 , B81B2207/03 , G01L25/00 , G01P15/097 , G01P15/125 , G01P2015/0831 , H03B5/30 , H03H9/02275 , H03H2009/0248 , H03H2009/02519 , H03L1/022 , H03L7/1976
Abstract: A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.
Abstract translation: 用于补偿MEMS器件上的应变的方法包括在以包括MEMS器件的系统操作的第一模式中产生指示MEMS器件上的应变的信号。 该方法包括基于该信号补偿在操作系统的第二模式中的应变。 生成信号可以包括将MEMS器件的谐振频率的指示符与MEMS器件的预定谐振频率进行比较。 生成信号可以包括将应变敏感器件的第一输出与应变不敏感器件的第二输出进行比较并产生其指示符。 生成信号可以包括在第一模式中感测MEMS器件的应变敏感电极的第一电容转换并且基于其产生信号。 可以在第二模式中禁用MEMS器件的应变敏感电极。
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