Invention Grant
- Patent Title: Power semiconductor housing with contact mechanism
- Patent Title (中): 功率半导体外壳带接触机构
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Application No.: US14139194Application Date: 2013-12-23
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Publication No.: US09018748B2Publication Date: 2015-04-28
- Inventor: Mauro Monge
- Applicant: Mauro Monge
- Applicant Address: CH
- Assignee: ABB Technology AG
- Current Assignee: ABB Technology AG
- Current Assignee Address: CH
- Agency: St. Onge Steward Johnston & Reens LLC
- Main IPC: H01L23/16
- IPC: H01L23/16 ; H01L23/58 ; H01L23/00 ; H01H79/00 ; H01L23/04 ; H01L25/07 ; H01L25/11 ; H02M7/00 ; H01H39/00 ; H03K17/10

Abstract:
A housing for a power semiconductor, providing a compartment for installation of a power semiconductor, and including a first and a second terminal. The terminals are for connection of a power semiconductor installed in the compartment, and for leading current to and from the compartment. The housing includes a contact mechanism for bypassing the compartment, the contact mechanism including at least one movable contact arranged for electrically connecting the first and second terminal, the at least one movable contact being movable between a disconnected first position and a connected second position. The contact mechanism further includes a bypass actuator arranged inside the compartment and provided for transforming a pressure from an exploding semiconductor into motion, the bypass actuator is operatively connected to the movable contact and arranged to move the movable contact from the first to the second position when subjected to the pressure of an exploding semiconductor.
Public/Granted literature
- US20140145321A1 Power Semiconductor Housing With Contact Mechanism Public/Granted day:2014-05-29
Information query
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