Invention Grant
US09018748B2 Power semiconductor housing with contact mechanism 有权
功率半导体外壳带接触机构

Power semiconductor housing with contact mechanism
Abstract:
A housing for a power semiconductor, providing a compartment for installation of a power semiconductor, and including a first and a second terminal. The terminals are for connection of a power semiconductor installed in the compartment, and for leading current to and from the compartment. The housing includes a contact mechanism for bypassing the compartment, the contact mechanism including at least one movable contact arranged for electrically connecting the first and second terminal, the at least one movable contact being movable between a disconnected first position and a connected second position. The contact mechanism further includes a bypass actuator arranged inside the compartment and provided for transforming a pressure from an exploding semiconductor into motion, the bypass actuator is operatively connected to the movable contact and arranged to move the movable contact from the first to the second position when subjected to the pressure of an exploding semiconductor.
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